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Recent Progress in AlGaN/GaN Based Optoelectronic Devices

Published online by Cambridge University Press:  21 February 2011

M. A. Khan ,
Q. Chen ,
C. J. Sun ,
J. W. Yang  and
M. S. Shur
M. A. Khan
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
Q. Chen
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
C. J. Sun
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
J. W. Yang
Affiliation:
APA Optics, APA inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
M. S. Shur
Affiliation:
Department of Electrical Engineering, University of Virginia, Charlottesville, VA 22903
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Abstract

We review our recent results on GaN based optoelectronic devices, which include InGaN-AlGaN Light Emitting Diodes (LEDs), GaN photoconductive, Schottky barrier, and p-n junction ultraviolet detectors, and optoelectronic AlGaN-GaN Heterostructure Field Effect Transistors. GaN-based optoelectronic devices cover a wide spectral range and demonstrate visible blind operation. A high quality of the epitaxial layers, the recent development of high performance GaN-based heterostructure field effect transistors, and transparent substrates make this material system uniquely suited for optoelectronic integrated circuits operating in visible and ultraviolet range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 913
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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