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Recent Progress in SOI Materials and Devices for VLSI Applications

Published online by Cambridge University Press:  22 February 2011

H. H. Hosack
H. H. Hosack*
Affiliation:
Semiconductor Process and Design Center Texas Instruments, Incorporated Dallas, Texas 75265
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Extract

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 687
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Izumi, k. et al. , Trans. Inst. El. and Comm. Eng. Jpn. Sect. E (Japan), v. E62, no. 12, p. 921, Dec. 1979.Google Scholar
2 Burnham, M. E. and Wilson, S. R., Proc. SPIE, Vol. 530, p. 240, 1985.Google Scholar
3 Hemment, P. I. F., Mater. Res. Soc. Symp. Proc, 53, p. 207, 1986.Google Scholar
4 Mao, B.-Y. et al. , IEEE Trans. Nucl. Sci., vol NS–33, no. 6, p. 1702, 1986.Google Scholar
5 Davis, G. E. et al. , IEEE Trans Nucl. Sci., vol. 32, p.4323, 1985.Google Scholar
6 Cheek, T. F. and Platteter, D. G., IEEE Trans. Nuc. Sci., p. 1350, 1988.Google Scholar
7 Houston, T. W. et al. , paper L1, p. 137, IEEE SOS/SOI Technology Conference Proceedings, (1989).Google Scholar
8 Auberton-Herve, A. J., paper 1.3, p 8, IEEE SOS/SOI Technology Conference Proceedings, (1993).Google Scholar
9 Cohn, L., Hosack, H. H., Cherne, R., and Fechner, P., paper 8.1, p 158, IEEE SOS/SOI Technology Conference Proceedings, (1993).Google Scholar