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Recombination Strength at Intra and Intergrain Defects in Crystalline Silicon Investigated by Low Temperature Lbic Scan Maps

Published online by Cambridge University Press:  10 February 2011

I. Perichaud  and
S. Martinuzzi
I. Perichaud
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” - University of Marseille - F 13397 Marseille Cedex 20 - France
S. Martinuzzi
Affiliation:
Laboratoire de Photoélectricité - EA 882 D.S.O. “Défauts dans les Semi-conducteurs et leurs Oxydes” - University of Marseille - F 13397 Marseille Cedex 20 - France
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Abstract

Annealing of multicrystalline silicon wafers in argon at temperatures higher than 800°C increases the recombination strength of extended defects irreversibly, while external gettering techniques applied at the same temperatures reduce their recombination strength. It is observed that in the light beam induced current (LBIC) scan maps at 80 K the contrast of some extended defects in raw samples is enhanced and additional defects are detected. The same features of defects are revealed by the LBIC maps of raw samples at 80 K as well as at 300 K after annealing. In other words, the LBIC scan maps at low temperature detect “sleeping” defects, which do not recombine at 300 K, but which are activated by thermal treatments during processing steps. The results can be explained by the Shockley-Read-Hall statistic involving the presence of deep and shallow energy levels in the band gap associated with the impurity-defect interaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 633
Copyright
Copyright © Materials Research Society 1998

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