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Recrystallization of Polycrystalline Silicon Over SiO2 through Strip Electron Beam Irradiation

Published online by Cambridge University Press:  22 February 2011

Y. Hayafuji ,
T. Yanada ,
H. Hayashi ,
K. E. Williams ,
S. Usui ,
S. Kawado ,
A. Shibata ,
N. Watanabe  and
M. Kikuchi
Y. Hayafuji
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
T. Yanada
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
H. Hayashi
Affiliation:
Semiconductor Division, Sony Corporation, Asahi, Atsugi, 243 Japan
K. E. Williams
Affiliation:
Energy Sciences, Inc., 8 Gill Street, Woburn, Mass., 01801 U.S.A.
S. Usui
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
S. Kawado
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
A. Shibata
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
N. Watanabe
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
M. Kikuchi
Affiliation:
Sony Corporation Research Center, 174 Fujitsuka-cho, Hodogaya-ku, Yokohama, 240 Japan
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Abstract

We have studied the influences of substrate orientation and growth direction on laterally seeded recrystallization of poly-crystalline silicon on a SiO2; film through strip electron beam irradiation. We found that growth in a [110] direction produced films with better crystal quality than growth in a [100] direction on a (001) substrate, and that growth in a [211] direction provides better crystal quality than growth in a [011] direction on a (111) substrate. A simple model of the growth interface composed of {111} planes is proposed

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 491
Copyright
Copyright © Materials Research Society 1984

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References

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