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Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

Published online by Cambridge University Press:  21 February 2011

H.Z. Song ,
L.Z. Zhang ,
B.R. Zhang  and
G.G. Qin
H.Z. Song
Affiliation:
Department of Physics, Peking University, Beijing 100871, P.R.China
L.Z. Zhang
Affiliation:
Department of Physics, Peking University, Beijing 100871, P.R.China
B.R. Zhang
Affiliation:
Department of Physics, Peking University, Beijing 100871, P.R.China
G.G. Qin
Affiliation:
Department of Physics, Peking University, Beijing 100871, P.R.China and International Center for Material Physics, Academia Sinica, Shenyang 110015, P.R.China
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Abstract

It was found that porous silicon (PS) layers formed on 0.01 Ωcm (111) and 0.02 Ωcm (100) Si substrates show high photoluminescence (PL) peak energies on both lower and higher porosity sides and a minimum of PL peak energy at the moderate porosity, while those formed on 0.8 and 10Ωcm (111) p-type Si substrates show an increase of PL peak energy with porosity on the lower side and a saturation of PL peak energy with porosity on the higher side. These experimental facts are not consistent with the quantum confinement model for light emission of PS, which predicts a monotonous increase of PL peak energy with PS porosity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 495
Copyright
Copyright © Materials Research Society 1994

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References

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