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Relevance of Threading Dislocations for the Thermal Oxidation of GaN (0001)

Published online by Cambridge University Press:  01 June 2015

Maria Reiner ,
Christian Koller ,
Kurt Pekoll ,
Rudolf Pietschnig  and
Clemens Ostermaier
Maria Reiner
Affiliation:
Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria Institute of Chemistry and CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Christian Koller
Affiliation:
Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria
Kurt Pekoll
Affiliation:
Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria
Rudolf Pietschnig
Affiliation:
Institute of Chemistry and CINSaT, University of Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany
Clemens Ostermaier
Affiliation:
Infineon Technologies Austria AG, Siemensstr. 2, 9500 Villach, Austria
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Abstract

The influence of threading dislocations (TDs) on the dry thermal oxidation of c-plane gallium nitride (GaN) is investigated for oxidation temperatures above 800°C. The transformation of GaN to gallium oxide (Ga2O3) is preferably found at TDs and grain boundaries, showing enhanced vertical oxidation, compared to defect free surface sites. Therefore, the increase in surface roughness commonly obtained upon oxidation is explained by an inhomogeneous chemical reactivity associated with those crystal defects. Additionally, annealing in an N2 atmosphere showed that also decomposition is favored at such chemically reactive spots. Comparison between decomposition and oxidation suggests that at temperatures above 950°C, the Ga2O3 formation is supported by the decomposition of GaN and subsequent oxidation of the metallic gallium.

Keywords

III-Voxidationdislocations
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2133138
Copyright
Copyright © Materials Research Society 2015 

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