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Reliability of High-Temperature Operation for GaN-Based OPAMP

Published online by Cambridge University Press:  31 January 2011

Kazuki Nomoto ,
Kazuya Hasegawa ,
Masataka Satoh  and
Tohru Nakamura
Kazuki Nomoto
Affiliation:
kazuki.nomoto.nt@k.hosei.ac.jp, Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Kazuya Hasegawa
Affiliation:
skyisthelimit@jcom.home.ne.jp, Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Masataka Satoh
Affiliation:
mar@ionbeam.hosei.ac.jp, Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Rsearch Center for Micro-Nano Technology, Hosei University, EECE, Tokyo, Japan
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Abstract

We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 100 oC. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion-implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs.

Keywords

devicescompoundion-implantation

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References

1. Saito, Wataru, Kuraguchi, Nasahiko, Takada, Yoshiharu, Tsuda, Kunio, Omura, Ichiro, and Ogura, Tsuneo, “High Breakdown Voltage Undoped AlGaN GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC DC Converter Application”, IEEE Transaction on Electron Devices Vol. 51, No. 11, pp.1913–1917, 2004.10.1109/TED.2004.836799Google Scholar
2. Kumar, Vipan, Kim, D. H., Basu, A., and Adesida, I., “0.25 μm Self Aligned AlGaN/GaN High Electron Mobility Transistors”, IEEE Electron Device Letters Vol. 29, No. 1, pp.18–20, 2008.10.1109/LED.2007.911612Google Scholar
3. Joshin, Kazukiyo and Kikkawa, Toshihide, “High Power and High Efficiency GaN HEMT Amplifiers”, Radio and Wireless Symposium, 2008 IEEE, 22-24 Jan. 2008 Page(s):65–68 Google Scholar
4. Chumbes, Eduardo M., Schremer, A. T., Smart, Joseph A., Wang, Y., MacDonald, Noel C., Hogue, D., Komiak, James J., Lichwalla, Stephen J., Leoni, Robert E. III , and Shealy, James R., “AlGaN/GaN High Electron Mobility Transistors on Si(111) Substrates”,IEEE Transaction on Electron Devices Vol. 48, No. 3, pp.420–426, 2001.10.1109/16.906430Google Scholar
5. Jia, Shuo, Dikme, Yilmaz, Wang, Deliang, Chen, Kevin J., Lau, Kei May, and Heuken, Michael, “AlGaN GaN HEMTs on Patterned Silicon (111) Substrate”IEEE Electron Device Letters Vol. 26, No. 3, pp.130–132, 2005.Google Scholar
6. Choi, Young Chul, Pophristic, Milan, Cha, Ho Young, Peres, Boris, Spencer, Michael G., and Eastman, Lester F., “The Effect of an Fe doped GaN Buffer on OFF State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate”, IEEE Transaction on Electron Devices Vol. 53, No. 12, pp.2926–2931, 2006.10.1109/TED.2006.885679Google Scholar
7. Yu, Mark, Ward, Robert J., and Hegazi, Gamal M., “High Power RF Switch MMICs Development in GaN on Si HFET Technology”, Radio and Wireless Symposium, 2008 IEEE, 22-24 Jan. 2008 Page(s):855–858 Google Scholar
8. Pytel, S.G., Lentijo, S., Koudymov, A., Rai, S., Fatima, H., Adivarahan, V., Chitnis, A., Yang, J., Hudgins, J.L., Santi, E., Monti, A., Simin, G., and Khan, M. Asif, “AlGaN/GaN MOSHFET Integrated circuits power converter”, 2004 35th Annual IEEE Power Electronics Specialists Conference, pp.579–584, 2004.Google Scholar
9. Hussain, T., Micovic, M., Tsen, T., Delaney, M., Chow, D., Schmitz, A., Hashimoto, P., Wong, D., Moon, J. S., Hu, M., Duvall, J. and McLaughlin, D., “GaN HFET digital circuit technology for harsh environments”, Electron. Lett., vol. 39, no. 24, pp. 1708–1709, 2003.10.1049/el:20031129Google Scholar
10. Cai, Y., Cheng, Z., Yang, Z., Tang, C. W., Lau, K. M., and Chen, K. J., “High temperature operation of AlGaN/GaN HEMTs direct coupled FET logic(DCTL) integrated circuits”, Electron Devices Letters, vol. 28, no.5, pp.328–331, 2007.10.1109/LED.2007.895391Google Scholar