Skip to main content
×
×
Home

Resistance Change Caused by Electrochemically Induced Carrier Injection in NiO Films.

  • T. Yoda (a1), K. Kinoshita (a1) (a2), T. Fukuhara (a1), S. Kishida (a1) (a2), N. Sawai (a3) and K. Honda (a4)...
Abstract

In our previous work, low resistance state (LRS) and high resistance state (HRS) areas on a nickel-oxide (NiO) film formed by applying a voltage using conductive atomic-force microscopy (C-AFM) was observed by scanning electron microscope (SEM). Comparing the observed secondary electron image (SEI) contrast to the report about the dopant-type dependence of SEI contrast reported on silicon, it was suggested that the LRS and HRS areas are, respectively, electrochemically induced p-type Ni1-xO (x > 0) and intrinsic (stoichiometric) or ntype Ni1-xO (x ≤ 0). In this paper, we verified that resistance change caused by C-AFM is due to electrochemically induced carrier injection. Reduction effect of H2 annealing on the writing area, voltage dependence of depletion layer capacitance formed between the writing area and AFM-tip using scanning nonlinear dielectric microscopy (SNDM), and the effect of Schottky barrier formation between the writing area and thin metal layer on SEI contrast were investigated. Based on these results, it was clarified that the LRS and HRS areas are, respectively, p-type Ni1-xO (x > 0) and intrinsic (stoichiometric) or n-type Ni1-xO (x ≤ 0)

Copyright
References
Hide All
1.Baek, I. G., Kim, D. C., Lee, M. J., Kim, H. J., Lee, M. S., Lee, J. E., Ahn, S. E., Seo, S., Lee, J. H., Park, J. C., Cha, Y. K., Park, S. O., Kim, H. S., Yoo, I. K., Chung, U-In, Moon, J. T. and Ryu, B. I.: Tech. Dig. Int. Electron Devices Meet., 2005, p.769.
2.Hosoi, Y., Tamai, Y., Ohnishi, T., Ishihara, K., Shibuya, T., Inoue, Y., Yamazaki, S., Nakano, T., Ohnishi, S., Awaya, N., Inoue, I. H., Shima, H., Akinaga, H., Takagi, H., Akoh, H., and Tokura, Y.: Tech. Dig. Int. Electron Devices Meet., 2006, p.793.
3.Tsunoda, K., Kinoshita, K., Noshiro, H., Yamazaki, Y., Iizuka, T., Ito, Y., Takahashi, A., Okano, A., Sato, Y., Fukano, T., Aoki, M., and Sugiyama, Y.: Tech. Dig. Int. Electron Devices Meet., 2007, p.767.
4.Greene, P.D., Bush, E.L., and Rawlings, I.R., Proc. Symp. on Deposited Thin Film Dielectric Materials, edited by Vratny, F. (The Electrochemical Society, New York, 1969), pp. 167185
5.Kawai, M., Ito, K., Ichikawa, N., and Shimakawa, Y., Appl. Phys. Lett. 96, 072106 (2010).
6.Fujiwara, K., Nemoto, T., Rozenberg, M. J., Nakamura, Y. and Takagi, H.: Jpn. J. Appl. Phys., 47 (2008) 6266.
7.Shima, H., Takano, F., Muramatsu, H., Yamazaki, M. and Akinaga, H., Kogure, A.: Phys. Status Solidi, 2 (2008) 99.
8.Kinoshita, K., Tamura, T., Aoki, M., Sugiyama, Y. and Tanaka, H.: Appl. Phys. Lett., 89 (2006) 103509.
9.Kinoshita, K., Yoda, T. and Kishida, S.: J. Appl. Phys., 110 (2011) 064503.
10.Kazemian, P., Mentink, S. A. M., Rodenburg, C. and Humphreys, C. J.: J. Appl. Phys., 100 (2006) 054901.
11.El-Gomati, M., Zaggout, F., Jayacody, H., Tear, S. and Wilson, K.: Surf. Interface Anal., 37 (2005) 901
12.Seo, S., Lee, M. J., Seo, D. H., Jeoung, E. J., Suh, D.-S., Joung, Y. S., Yoo, I. K., Hwang, I. R., Kim, S. H., Byun, I. S., Kim, J.-S., Choi, J. S., and Park, B. H.: Appl. Phys. Lett. 85, 5655 (2004).
13.Terakura, K., Williams, A. R., Oguchi, T., and Kubler, J.: Phys. Rev. Lett. 52, 1830 (1984).
14.Tsuda, N., Nasu, K., Fujimori, A., and Shiratori, K., Electronic Conduction in Oxides (Springer, New York, 2000), p. 213
15.Adler, D. and Feinleib, J.: Phys. Rev. B 2, 3112 (1970).
16.Yoshida, C., Kinoshita, K., Yamasaki, T., and Sugiyama, Y.: Appl. Phys. Lett. 93, 042106 (2008).
17.Cho, Y., Fujimoto, K., Hiranaga, Y., Wagatsuma, Y., Onoe, A., Terabe, K. and Kitamura, K.: Appl. Phys. Lett., 81 (2002) 4401.
18.Honda, K., hashimoto, S., and Cho, Y.: Appl. Phys. Lett., 86, (2005) 063515
19.Greiner, Mark T., Helander, Michael G., Wang, Zhi-Bin, Tang, Wing-Man, and LuS, Zheng-Hong: J. Phys. Chem. C., 114, (2010) 1977
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Keywords

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 7 *
Loading metrics...

Abstract views

Total abstract views: 98 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 25th June 2018. This data will be updated every 24 hours.