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Response of Semiconductors and Fullerenes to Ultrashort and Ultra-Intense Laser Pulses

Published online by Cambridge University Press:  15 February 2011

Traian Dumitrica ,
Ben Torralva  and
Roland E. Allen
Traian Dumitrica
Affiliation:
Department of Physics, Texas A&M University, College Station. Texas 77843, USA
Ben Torralva
Affiliation:
Department of Physics, Texas A&M University, College Station. Texas 77843, USA
Roland E. Allen
Affiliation:
Department of Physics, Texas A&M University, College Station. Texas 77843, USA
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Abstract

We report new theoretical studies of the electronic and structural response of materials to fast intense laser pulses, with durations ∼ 10–100 feintoseconds and intensities up to ∼10 terawatts/cm2. The results provide still stronger evidence that GaAs undergoes a true nonthermal phase transition as the intensity is varied at constant pulse duration. For C60, there are also different regimes of behavior as a function of pulse intensity. At low intensity, various optically-active modes are observed. At high intensity, the breathing moode is by far the most dominant. At still higher intensities, there is photofragmentation, with the evolution of dinmers and other products. These results were all obtained in simulation-. using tight-binding electron-ion dyanamics (TED).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 579: Symposium B – The Optical Properties of Materials , 1999 , 149
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Shank, C. V., Yen, R., and Hirlimann, C., Phys. Rev. Lett. 50, 454 (1983) and 51, 900 (1983).Google Scholar
[2] Siegal, Y., Glezer, E. N., and Mazur, E., Phys. Rev. B 49, 16403 (1994).Google Scholar
[3] Siegal, Y., Glezer, E. N., Huang, L., and Mazur, E.. Ann. Rev. of Mat. Sci. 25, 223 (1995).Google Scholar
[4] Glezer, E. N., Siegal, Y., Huang, L., and Mazur, E., Phys. Rev. B 51, 6959 (1995).Google Scholar
[5] Glezer, E.N., Siegal, Y., Huang, L., and Mazur, E., Phys. R1v. B 51, 9589 (1995).Google Scholar
[6] Hluang, L., Callan, J. P., Glezer, E. N., and Mazur, E.. Phys. Retv. Lett. 80, 185 (1998).Google Scholar
[7] Callan, J. P., Kim, A. M.-T., Huang, L., and Mazur, E., Chem. Phys. (in press), and references therein.Google Scholar
[8] Sokolowski-Tinten, K., Bialkowski, J., and Linde, D. von der, Phys. Rev. B 51, 14 186 (1995).Google Scholar
[9] Graves, J. S. and Allen, R.E., Phys. Rev. B 58, 13 627 (1998).Google Scholar
[10] Dumitrich, T., Graves, J. S., and Allen, R.E., Phys. Rev. B 58, 15 340 (1998).Google Scholar
[11] Dumritrica, T. and Allen, R. E., submitted for publication.Google Scholar
[12] Dexheimner, S. L., Mittleman, D. M., Schoenlein, R. W., Vareka, W., Xiang, X. -D., Zettl, A., and Shank, C. V.. In Ultrafast Phenomena VIII, Editors: Martin, J. L., Migus, A., Mourou, G. A., Zewail, A. H. (Springer-Verlag, Berlin, 1993).Google Scholar
[13] Fleischer, S. B., Pevzner, B., Dougherty, D. J., Zeiger, H. J., Dresselhaus, G., Dresselbaus, M. S., Ippen, E. P., and Hebard, A. F., Appl. Phys. Lett. 71, 2734 (1997).Google Scholar
[14] Torralva, B. and Allen, R. E.. in the Proceedings of the 24th International Conference on the Physics of Semiconductors (Jerusalem, August, 1998).Google Scholar
[15] Torralva, B. et al. , to be published.Google Scholar
[16] Franenheim, Th. et al. , to be published.Google Scholar