In this study indium tin oxide (ITO) thin films have been deposited by RF sputtering technique on quartz substrate. In all cases, the substrate was heated during deposition. Thin film deposited under various process conditions, shows characteristic XRD reflection corresponding to the (222) crystal orientation. Transmittance of the film has been measured for the wavelength range from 190 to 3300 nm. Average transmittance of 84.4%, 90.2% and 85.3% for wavelengths up to 800 nm, 2500 nm and 3300 nm respectively has been obtained. The resistivity in this case is found to be as low as ∼10 × 10-4 Ω-cm. Our study is focused on controlling the resistivity of the deposited film, without compromising transmittance in the near infra red (NIR) region of the spectrum. Substrate heating during deposition is found to result in films with grains which are oriented in (222) direction predominantly. Moreover, the average grain size is increased with subsequent annealing. It has been observed that though the transmittance for the samples doesn’t vary substantially upon annealing the resistivity decreases by several factors.
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