No CrossRef data available.
Article contents
A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories
Published online by Cambridge University Press: 21 February 2011
Abstract
A robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993
References
REFERENCES
3.
Kim, U. S. and Sethi, R. B., Extended Abstract of Electrochemical Society Meeting, Phoenix, AZ, Oct. 1991, Abstract No. 216.Google Scholar
5.
Murali, V., Wu, A.T., Chatterjee, A., and Fraser, D. B., presented at the 1990 Symposium on VLSI Technology.Google Scholar
6.
Pan, C., Wu, K.J., Frieberger, P., Chatterjee, A., and Sery, G., IEEE Trans. on Electron Devices, Vol. 37, No. 6, 1990
Google Scholar