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The Role of Electron and Hole Traps in the Degradation and Breakdown of thermally grown SiO2 Layers

Published online by Cambridge University Press:  22 February 2011

M. M. Heyns  and
R. F. De Keersmaecker
M. M. Heyns
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw) Kapeldreef 75 B-3030 Leuven Belgium
R. F. De Keersmaecker
Affiliation:
Interuniversity Microelectronics Center (IMEC vzw) Kapeldreef 75 B-3030 Leuven Belgium
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Abstract

The degradation and charge build-up of thermally grown silicon diozide layers (with thicknesses varying between 20 and 40 nm) during various stress experiments was investigated. The slow trapping instability generated during charge injection was demonstrated to originate from initially present hole traps. The generation of electron traps in the oxide layer close to the non-injecting interface during high-field stressing was established both for Al-gate and poly-Si gate structures. No evidence could be found for the generation of hole traps during high-field stressing. No bulk oxide charges were detected after a high-field stress, but only unstable near-interface charge trapping was evidenced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 205
Copyright
Copyright © Materials Research Society 1988

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