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Role of Teos in Improved Quality Pteos and O3-TEOS CVD SiO2 Films

Published online by Cambridge University Press:  25 February 2011

Mark A. Bourgeois ,
K. Ramkumar  and
Arjun N. Saxena
Mark A. Bourgeois
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
K. Ramkumar
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
Arjun N. Saxena
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590
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Abstract

The effects of TEOS (Tetra-ethyl-ortho-silicate) concentration on the physical, chemical and electrical characteristics of undoped SiO2 films deposited by plasma (PECVD) and thermal CVD (ThCVD) processes, are described. It is shown that the (TEOS/O3) or (TEOS/O) ratio strongly influences the various film properties. The uniformity of film thickness is better at higher (TEOS/O3) or (TEOS/O2) ratios in both processes. In ThCVD the SiO2 films are denser (low etch rate) when deposited at low (TEOS/O3 ) ratio. This study has shown that the TEOS concentration can be used to tailor film properties.

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