Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T02:00:13.941Z Has data issue: false hasContentIssue false
  • English
  • Français

Room Temperature Recrystallization of Electroplated Copper Thin Films: Methods and Mechanisms

Published online by Cambridge University Press:  17 March 2011

D. Walther ,
M. E. Gross ,
K. Evans-Lutterodt ,
W. L. Brown ,
M. Oh ,
S. Merchant  and
P. Naresh
D. Walther
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
M. E. Gross*
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
K. Evans-Lutterodt
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
W. L. Brown
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
M. Oh
Affiliation:
Bell Labs, Lucent Technologies, Orlando, FL 32819
S. Merchant
Affiliation:
Bell Labs, Lucent Technologies, Orlando, FL 32819
P. Naresh
Affiliation:
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974
*
*author to whom correspondence should be addressed: mihal@lucent.com
Get access

Abstract

We report a comparison of the room temperature recrystallization of electroplated (EP) copper in blanket films as a function of thickness measured by focused ion beam (FIB) microscope images and sheet resistance measurements. Both sets of data show an increase in rate with film thickness from 0.75νm up to 5νm, while little recrystallization is observed in films thinner than 0.75νm. Interestingly, the recrystallization rates from FIB analysis are consistently faster than those from the sheet resistance measurements. These data suggest that the recrystallization is initiated close to the top surface of the EP Cu film, but that in thinner films a high surface-to-volume ratio allows surface inhibition or pinning to retard the transformation. A Johnson-Mehl-AvramiKolmogorov (JMAK) analysis of the two data sets yields unusually high values for the Avrami exponent μ of up to 7 for the FIB data, while lower values of around 4 are obtained for the sheet resistance data. X-ray diffraction pole figures of the films have also been collected and correlations between the crystallographic texture, film thickness and recrystallization are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D10.1.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Edelstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motsiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R., Su, L., Luce, S. and Slattery, J., IEEE 1997 Intl. Electron Devices Meeting Digest, 773 (1997).Google Scholar
2. Hu, C.-K., Rosenberg, R., and Lee, K.Y., Appl. Phys. Lett. 74, 2945 (1999).10.1063/1.123974Google Scholar
3. Ryu, C., Kwon, K.-W., Loke, A.L.S., Dubin, V.M., Rahim, R.A., Ray, G.W., and Wong, S.S., Digest IEEE 1998 Symp. VLSI Tech., p. 156.Google Scholar
4. Andricacos, P.C., Uzoh, C., Dukovic, J.O., Horkans, J., and Deligianni, H., IBM J. Res. Devel. 42, 567 (1998).10.1147/rd.425.0567Google Scholar
5. Gangulee, A., J. Appl. Phys. 43, 867 (1972).10.1063/1.1661296Google Scholar
6. Hofer, E.M. and Hintermann, H.E., J. Electrochem. Soc. 112, 167 (1965).10.1149/1.2423487Google Scholar
7. Tomov, I.V., Stoychev, D.S., and Vitanova, I.B., J. Appl. Electrochem. 15, 887 (1985).10.1007/BF00614364Google Scholar
8. Ritzdorf, T., Graham, L., Jin, S., Mu, C., and Fraser, D., in Intl. Interconnect Technol. Conf. Abstracts, pp. 166–168 (San Francisco, CA, June 1998).Google Scholar
9. Lingk, C., Gross, M.E., J. Appl. Phys. 84, 5547 (1998).10.1063/1.368856Google Scholar
10. Jiang, Q.-T. and Smekalin, K., in Adv. Metalliz. Conf. 1998, edited by Sandhu, G.S., Koerner, H., Murakami, M., Yasuda, Y., and Kobayashi, N. (Mater. Res. Soc., Pittsburgh, PA, 1999), pp. 209–215.Google Scholar
11. Cabral, C. Jr., Andricacos, P.C., Gignac, L., Noyan, I.C., Rodbell, K.P., Shaw, T.M., Rosenberg, R., Harper, J.M.E., DeHaven, P.W., Locke, P.S., Malhotra, S., Uzoh, C., and Klepeis, S.J., in Adv. Metalliz. Conf. 1998, edited by Sandhu, G.S., Koerner, H., Murakami, M., Yasuda, Y., and Kobayashi, N. (Mater. Res. Soc., Pittsburgh, PA, 1999), pp. 81–87.Google Scholar
12. Gignac, L.M., Rodbell, K.P., Cabral, C. Jr., Andricacos, P.C., Rice, P.M., Beyers, R.B., Locke, P.S., and Klepeis, S.J., Mat. Res. Soc. Proc. 564, 373 (1999).10.1557/PROC-564-373Google Scholar
13. Gross, M.E., Drese, R., Lingk, C., Brown, W.L., K. Evans-Lutterodt, Barr, D., Golovin, D., Ritzdorf, T., Turner, J., and Graham, L., Mat. Res. Soc. Symp. Proc. 564, 379 (1999).10.1557/PROC-564-379Google Scholar
14. Harper, J.M.E., Cabral, C. Jr., Andricacos, P.C., Gignac, L., Noyan, I.C., Rodbell, K.P., and Hu, C.K., J. Applied Phys. 86, 2516 (1999).10.1063/1.371086Google Scholar
15. Brongersma, S.H., Richard, E., Vervoort, I., Bender, H., Vandervorst, W., Lagrange, S., Beyer, G., and Maex, K., J. Appl. Phys. 86, 3642 (1999).10.1063/1.371272Google Scholar
16. Malhotra, S.G., Locke, P.S., Simon, A.H., Fluegel, J., Parks, C., DeHaven, P., Hemmes, D.G., Jackson, R., and Patton, E., in Adv. Metalliz. Conf. 1999, edited by Gross, M.E., Gessner, T., Kobayashi, N., and Yasuda, Y. (Mater. Res. Soc., Pittsburgh, PA, 2000), in press.Google Scholar
17. Gross, M.E., Drese, R., Golovin, D., Brown, W.L., Lingk, C., Merchant, S., and Oh, M., in Adv. Metalliz. Conf. 1999, edited by Gross, M.E., Gessner, T., Kobayashi, N., and Yasuda, Y. (Mater. Res. Soc., Pittsburgh, PA, 2000), in press.Google Scholar
18. HyperNex, State College, PA 16801Google Scholar
19. Humphreys, F. J. and Hatherly, M., Recrystallization and Related Annealing Phenomena (Pergamon, New York, 1996).Google Scholar
20. Gross, M.E., and Walther, D., unpublished results.Google Scholar
21. Porter, D.A. and Easterling, K.E., Phase Transformations in Metals and Alloys (Chapman & Hall, London, 1992), p. 123.10.1007/978-1-4899-3051-4Google Scholar
22. Lingk, C., Gross, M.E., Brown, W.L., J. Appl. Phys. 87, 2232 (2000).10.1063/1.372166Google Scholar