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Room-Temperature CW Operation of SQW Lasers on Si Grown withAiGaAs/AlGaP Intermediate Layers by MoCVD

Published online by Cambridge University Press:  21 February 2011

T. Egawa ,
Y. Hayashi ,
T. George ,
T. Soga ,
T. Jimbo  and
M. Umeno
T. Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Y. Hayashi
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. George
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

The heterointerfaces of single quantum wells (SQWs) and the characteristicsof SQW lasers on Si substrates grown with Al0.5 Ga0 5As/Al0.55Ga0.45P intermediate layers(AlGaAs/AlGaP ILs) entirely by MOCVD are reported. The surface morphologyand the heterointerfaces of SQWs grown on Si substrates with theAlGaAs/AlGaP ILs are smoother than those of the two-step-grown sample. Thetwo-dimensional growth of the AlGaAs/AlGaP ILs on a Si substrate contributesto obtain the smooth heterointerface. The excellent lasing characteristicsare obtained by the AlGaAs/AlGaP ILs, which are caused by the smoothheterointerfaces. The lasers grown with the AlGaAs/AlGaP ILs show theaveraged threshold current density of 1.83 kA/cm2 and theaveraged differential quantum efficiency of 51.9 % under cw condition atroom temperature.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 189
Copyright
Copyright © Materials Research Society 1992

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References

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