Hostname: page-component-7dd5485656-bvgqh Total loading time: 0 Render date: 2025-10-31T06:03:18.130Z Has data issue: false hasContentIssue false
  • English
  • Français

Room-Temperature Migration of Ion-Implanted Boron in Silicon

Published online by Cambridge University Press:  15 February 2011

E. J. H. Collait ,
K. Weemers ,
D. J. Gravesteijn ,
J. G. M. van Berkum  and
N. E. B. Cowern
E. J. H. Collait
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
K. Weemers
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
D. J. Gravesteijn
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
J. G. M. van Berkum
Affiliation:
Philips CFT-Materials Analysis, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
N. E. B. Cowern
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, the, Netherlands
Get access

Abstract

Room temperature migration and clustering behaviour of implanted boron into silicon has been investigated by performing ion implantation of the 11B isotope into MBE-grown in-situ 10B-doped epitaxial Si-layers. We, for the first time, show that a fraction of the implanted boron migrates very deep into the bulk of the Si with substitutional 10B acting as trap centers for the migrating 11B.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 469: Symposium E – Defects and Diffusion in Silicon Processing , 1997 , 53
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Solmi, , Landi, E., and Baruffaldi, F., J. Appl. Phys. 68, 3250 (1990).Google Scholar
2. Jones, , Elliman, R.G., Petravic, M.M., and Kringhøj, P., Appl. Phys. Lett. 68, 3111 (1996).Google Scholar
3. Stolk, , Gossmann, H.-J., Eaglesham, D.J., Jacobson, D.C., Luftman, H.S., and Poate, J.M., Mat. Res. Soc. Symp. Proc. 354, 307 (1995).Google Scholar
4. Collari, , Gravesteijn, D.J., Lathouwers, E.G.C., and Kersten, W., Mat. Res. Soc. Symp. Proc. vol 378, 115 (1995).Google Scholar
5. Van Oostrum, K.J., Zalm, P.C., de Boer, W.B., Gravesteijn, D.J., and Maes, J.W.F., Appl. Phys. Lett. 61, 1513 (1992).Google Scholar
6. Nicois, , van de Walle, C.G., and Pantelides, S., Phys. Rev. B 40, 5484 (1989).Google Scholar
7. Cowern, , Janssen, K.T.F., van de Walle, G.F.A., and Gravesteijn, D.J., Phys. Rev. Lett. 65, 2434 (1990).Google Scholar
8. Watkins, , Phys. Rev. B 12, 5824 (1975).Google Scholar
9. Cowern, , van de Walle, G.F.A., Zalm, P.C., and Oostra, D.J.. Phys. Rev. Lett. 69, 116 (1992).Google Scholar
10. Cowern, , van de Walle, G.F.A., Gravesteijn, D.J., and Vriezema, C.J., Phys. Rev. Lett. 67, 212 (1991).Google Scholar
11. Note that the values of λo and of Eλ were determined from experiments using the same MBE-system as in this paper.Google Scholar
12. Cowern, N.E.B, Appl. Phys. Lett. 64, 2646 (1994).Google Scholar