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Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

Published online by Cambridge University Press:  21 March 2011

P.J. van den Oever ,
M.C.M. van de Sanden  and
W.M.M. Kessels
P.J. van den Oever
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

The scaling behavior of the roughness evolution of silicon nitride (a-SiNx:H) films with different mass densities (deposited from SiH4-N2-H2 and SiH4-NH3 based plasmas) has been investigated by atomic force microscopy and real time spectroscopic ellipsometry. The observed roughness exponent a is similar for both films, whereas the growth exponent b is a factor of two smaller for the higher density films. The relation between the lower value of b and the higher mass density is discussed.

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References

REFERENCES

[1] Hong, J., Kessels, W. M. M., Soppe, W. J., Weeber, A. W., Arnoldbik, W. M., and Sanden, M. C. M. van de, J. Vac. Sci. Technol. B 21, 2123 (2003).Google Scholar
[2] Barabási, A.-L. and Stanley, H.E., Fractal Concepts in Surface Growth (Cambridge University Press, Cambridge, England, 1995).Google Scholar
[3] Koh, J., Lu, Y., Wronski, C.R., Kuang, Y., Collins, R.W., Tsong, T.T., and Strausser, Y.E., Appl. Phys. Lett. 69, 1297 (1996).Google Scholar
[4] Smets, A.H.M., Kessels, W.M.M., and Sanden, M.C.M. van de, Appl. Phys. Lett. 82, 865 (2003).Google Scholar
[5] Flewitt, A.J., Robertson, J., and Milne, W.I., J. Appl. Phys. 85, 8032 (1999).Google Scholar
[6] Sanden, M.C.M. van de, Smets, A.H.M., and Kessels, W.M.M., Mat. Res. Soc. Symp. Proc. Vol. 715, 3 (2002).Google Scholar
[7] Karabacak, T., Zhao, Y.-P., Wang, G.-C., and Lu, T.-M., Phys. Rev. B 66, 075329 (2002).Google Scholar
[8] Jellison, G.E. Jr, and Modine, F.A., Appl. Phys. Lett. 69, 371 (1996).Google Scholar
[9] Ferlauto, A.S., Ferreira, G.M., Pearce, J. M., Wronski, C.R., Collins, R.W., Deng, X. and Ganguly, G., J. Appl. Phys. 92, 2424 (2002).Google Scholar