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Scaling Challenges for NAND and Replacement Memory Technology

Published online by Cambridge University Press:  08 July 2011

Kirk Prall
Kirk Prall*
Affiliation:
Micron Technology, 8000 S. Federal Way, Boise, ID 83716kprall@micron.com
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Abstract

Planar NAND technology is rapidly approaching its fundamental limits and will likely transition to a three dimensional structure. The scaling challenges facing NAND will be reviewed. Emerging memory technologies, such as the cross-point, will be discussed. The materials challenges facing emerging memories will be reviewed.

Keywords

memorynanoscalesemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q01-01
Copyright
Copyright © Materials Research Society 2011

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References

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