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Scanning Tunnelling Microscopy Investigation of Surface Morphology in the Growth of GaAs(001)

Published online by Cambridge University Press:  21 February 2011

E. J. Heller  and
M. G. Lagally
E. J. Heller
Affiliation:
University of Wisconsin - Madison, Madison, WI 53706
M. G. Lagally
Affiliation:
University of Wisconsin - Madison, Madison, WI 53706
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Abstract

The surface morphology of MBE - grown GaAs(001) has been investigated using scanning tunnelling microscopy (STM) and reflection high - energy electron diffraction (RHEED). STM shows that the missing - dimer - row structure of the (2 × 4)/c(2 × 8) reconstruction consists of rows of clusters of two As dimers separated by rows of two missing dimers, in agreement with previous reports. Layers grown on nominally flat substrates display a multi - level system of terraces elongated along [110] suggesting that growth occurs primarily by sticking at B - type steps. For films grown under certain growth conditions, B - type steps on vicinal substrates exhibit a dendritic step morphology, which may be an example of a step flow growth instability consistent with limited Ga diffusion over steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 249
Copyright
Copyright © Materials Research Society 1992

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References

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