Hostname: page-component-848d4c4894-nr4z6 Total loading time: 0 Render date: 2024-05-16T00:39:56.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

Published online by Cambridge University Press:  01 February 2011

Jinqiao Xie ,
Yi Fu  and
Hadis Morkoç
Jinqiao Xie
Affiliation:
xiej@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main St, Richmond, VA, 23284, United States
Yi Fu
Affiliation:
fuy@vcu.edu, Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Department of Electrical and Computer Engineering, Richmond, VA, 23284, United States
Get access

Abstract

GaN layers on sapphire substrates were grown by metalorganic chemical vapor deposition using in situ porous SiNx nano-network. Crystalline quality of epilayers was characterized by X-ray rocking curve scans, and the full width at hall maximum values for (002) and (102) diffractions were improved from 252 arc sec and 405 arc sec, respectively, in control samples to 216 arc sec and 196 arc sec when SiNx was used. Ni/Au Schottky diodes (SDs) were fabricated and the SD performance was found to be critically dependent on the SiNx coverage (fewer and farther the pores the better the results) which is consistent with the trends of XRD and photoluminescence data. A 1.13eV barrier height was achieved when 5min SiNx layer was used compared with 0.78 eV without any SiNx nanonetwork. Furthermore, the breakdown voltage improved from 76 V to 250V when SiNx nanonetwork was used in otherwise identical structures.

Keywords

nitridemetalorganic depositionthermionic emission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I15-34
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morkoç, H., Nitride Semiconductors and Devices (Springer, Berlin, 2nd Ed).Google Scholar
2. Gibart, P., Rep. Prog. Phys, 67, 667 (2004).Google Scholar
3. Haffouz, S., Lahrèche, H., Vennéguès, P., Mierry, P. de, Beaumont, B., Omnès, F., and Gibart, P., Appl. Phys. Lett. 73, 1278 (1998).Google Scholar
4. Fu, Y., Moon, T., Yun, F., Özgür, Ü., Xie, J. Q., Dogan, S., Morkoç, H., Inoki, C. K., Kuan, T. S., Zhou, L. and Smith, D. J., Appl. Phys. Lett. 86, 043108 (2005).Google Scholar
5. Kyeong, J., Kim, H.J., Seo, H.C., Kim, H.J., Yoon, E., Hwang, C.S., and Kim, H.J., Electrochemical Solid-State Lett. 7, C43 (2004).Google Scholar
6. Sze, M., Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).Google Scholar
7. Lee, C-T, Lin, Y-J, and Liu, D-S, Appl. Phys. Lett. 79, 2573 (2001).Google Scholar
8. Hasegawa, H. and Oyama, S., J. Vac. Sci. & Tech. B 20, 1674 (2002).Google Scholar
9. Zhou, Y., Li, M., Wang, D., Ahyi, C., Tin, C-C, Williams, J., Park, M., Williams, N. M. and Hanser, A., Appl. Phys. Lett. 88, 113509 (2006).Google Scholar
10. Bandic, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C., Vaudo, R. P., Phanse, V. M., and Redwing, J. M., Appl. Phys. Lett. 74, 1266 (1999).Google Scholar