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Segregation of Copper to (100) and (111) Silicon Surfaces in Equilibrium with Internal Cu3Si Precipitates

Published online by Cambridge University Press:  03 September 2012

W. R. Wampler
W. R. Wampler*
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056 wrwampl@sandia. gov
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Abstract

The energetics of copper segregation to silicon surfaces were examined by measuring the Cu coverage after equilibration between Cu on the surface and internal Cu3Si, for which the Cu chemical potential is known. For oxide-free surfaces the Cu coverage was close to one monolayer on (111) surfaces but was much smaller on (100) surfaces. The Cu coverage was greatly reduced by oxide passivation of the surface. LEED showed the 7×7 structure of the clean (111) silicon surface converted to a quasiperiodic 5×5 structure after equilibrating with Cu3Si. The 2×1 LEED patterns for (100) surfaces indicated no change in surface structure due to the Cu3Si. These results show that the free energy of copper in Cu3Si is higher than that of copper on (111) surfaces but lower than that of copper on (100) surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 371
Copyright
Copyright © Materials Research Society 1997

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