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Selective Imaging of Metal Atoms in the Semiconducting Layered Compound MoS2 by STM/STS

Published online by Cambridge University Press:  21 February 2011

S. Inoue ,
H. Kawami ,
M. Yoshimura  and
T. Yao
S. Inoue
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-hiroshima 724, Japan
H. Kawami
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-hiroshima 724, Japan
M. Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-hiroshima 724, Japan
T. Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-hiroshima 724, Japan
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Abstract

We have investigated the valence band structure of MoS2, a transition-metal dichalcogenide, using scannino tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) for the first time. We have found characteristic peaks in the (dl/dV)/(I/V)-V characteristic at −1.0 and −1.4V below the fermi level, which correspond to the S Pz state and Mo dz 2 state, respectively. Mo atoms are accessible only at the sampfe voltage of −1.4V in the range of −1.0 through − 1.5V, due to the strong localization of the Mo dz 2 state with very small bandwidth.

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References

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