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Self-assembly of Silicon Nanotubes
Published online by Cambridge University Press: 01 February 2011
Abstract
The growth of silicon nanotubes (SiNTs) by a dual-RF-plasma treatment technique is reported here. These SiNTs are vertically aligned and self-assembled from Si substrates at 500 degree Celsius by the use of Cu catalysts. Their diameters are ∼50 to 80 nm with tubular wall thickness of ∼10-15nm. Cu vapors were found partially filled inside the SiNTs. This is a novel technique that can convert bulk materials into their nanostructures.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1057: Symposium II – Nanotubes and Related Nanostructures , 2007 , 1057-II13-03
- Copyright
- Copyright © Materials Research Society 2008
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