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Self-Compensation of Donors in GaAs Grown by MOCVD

  • Gennady V. Andreyev (a1) and Vladimir M. Maslovsky (a2)

The variation of luminescence parameters with the tin dopant concentration is considered in GaAs epitaxial layers. It is shown that at typical growth conditions and absence of contamination the deep accepters are generated by self material so that the compensation coefficient (K=Na/Nd) of 0.25 is constant up to critical electron concentration of 2.1018cm−3. The self-compensation is realized by native point defect ofattice which is gallium vacancy. The gallium vacancy is arranged next to the every fourth donor at the distance of 7 A.

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