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Semiconductor Film Bonding Technology and Application in Two-axis Hall Sensor Fabrication

Published online by Cambridge University Press:  01 February 2011

Keishin Koh ,
Takashi Matushita  and
Koji Hohkawa
Keishin Koh
Affiliation:
koh@he.kanagawa-it.ac.jp, Kanagawa Institute of Technology, Dept. of Electrical and Electronic Engineering, 1030 Shimo-Ogino, Atsugi, 243-0929, Japan
Takashi Matushita
Affiliation:
takashi-ma@ele.kanagawa-it.ac.jp, Kanagawa Institute of Technology, Atsugi, 243-0292, Japan
Koji Hohkawa
Affiliation:
hohkawa@ele.kanagawa-it.ac.jp, Kanagawa Institute of Technology, Atsugi, 243-0292, Japan
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Abstract

We study basic problems of the semiconductor film bonding technology. We propose a new releasing method for a large number of semiconductor films using the film photoresist to protect the semiconductor films. We investigated the basic process conditions. We successfully released a large number of the GaAs film and bonded them on the Si, LiNbO3 substrates and metal Au surface. We estimated the ctystallinity of semiconductor films by X-ray diffraction and Raman spectral. The results clarified that these process were effective. As an application of the semiconductor film bonding technology, we fabricated a two-axis Hall sensor with planar structure. The two-axis hall sensor can measure axial and radial magnetic filed components (Bx and Bz) with a sensitivity of about 9.2 Ω/G for Bz and 4.5 Ω/G for Bx respectively.

Keywords

filmbondingsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N09-03
Copyright
Copyright © Materials Research Society 2008

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References

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