Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-30T03:16:21.469Z Has data issue: false hasContentIssue false
  • English
  • Français

SEMICONDUCTOR QUANTUM-WELL HETEROSTRUCTURES

Published online by Cambridge University Press:  28 February 2011

L. L. Chang
L. L. Chang*
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, N.Y. 10598
Get access

Abstract

Activities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to illustrate the general electronic properties of interest, which are obtained through various measurement techniques. Other heterostructures, including III-V, II(IV)-VI, and IV materials, are covered to the extent that they exhibit new and specific features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 267
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Chang, L. L., J. Vac. Sci Technol. BI,120 (1983).Google Scholar
2. Molecular Beam Epitaxy and Heterostructures,ed. Chang, L. L. and Ploog, K., Martinus Nijhoff Publishers, Dordrecht, 1985.Google Scholar
3. Synthetic Modulated Structures,ed. Chang, L. L. and Giessen, B. C., Academic Press, Orlando, 1985.Google Scholar
4. 3rd International Conference on Molecular Beam Epitaxy,San Francisco, Aug. 1984 (Proceedings ed. Arthur, J. R., J. Vac. Sci. Technol. B3,1985).Google Scholar
5. 17th International Conference on Physics of Semiconductors,San Francisco, Aug. 1984 (Proceedings ed. Chadi, J. D. and Harrison, W. A., Springer-Verlag, New York, 1985).Google Scholar
6. 13th International Conference on Electronic Properties of Two-Dimensional Systems, Kyoto, Sept 1985 (To appear in Surf. Sci.).Google Scholar
7. 2nd International Conference on Modulated Semiconductor Structures,Kyoto, Sept. 1985 (To appear in Surf. Sci.).Google Scholar
8. Ando, T., Fowler, A. B. and Stern, F., Rev. Modern Phys. 54,437 (1982).Google Scholar
9. Sollner, T. C. L. G., Goodhue, W. D., Tannenwald, P. E., Parker, C. D., and Peck, D. D., Appl. Phys. Lett. 43,588 (1983).Google Scholar
10. Mendez, E. E., Wang, W. I., Ricco, B., and Esaki, L., Appl. Phys. Lett. 47,415 (1985).Google Scholar
11. Davies, R. A., Kelly, M. J. and Kerr, T. M., Phys. Rev. Lett. 55,1114 (1985).Google Scholar
12. Leburton, J. P., Phys. Rev. B31,4080 (1985).CrossRefGoogle Scholar
13. Ihm, J., Phys. Rev. Lett. 55, 999 (1985).CrossRefGoogle Scholar
14. Greene, R. L. and Bajaj, K. K., Phys. Rev. B31,913 (1985).Google Scholar
15. Miller, R. C., Gossard, A. C. and Tsang, W. T., Physica 117-118BC,714 (1983).CrossRefGoogle Scholar
16. Voisin, P., Guldner, Y., Vieren, J. P., Voos, M., Maan, J. C., Delescluse, P. and Linh, N. T., Physica 117-118 BC,634 (1983).CrossRefGoogle Scholar
17. Stormer, H. L., A. M. Chang. Schlesinger, Z., Tsui, D. C., Gossard, A. C. and Wiegmann, W., Phys. Rev. Lett. 51, 126 (1983).CrossRefGoogle Scholar
18. Altarelli, M., in Proc. Les Houches Winter School on Semiconductor Superlattices and Heterojunctions,ed. Allan, G., Bastard, G., Boccara, N., Lannoo, M. and M. Voos (Springer-Verlag, 1985), in press.Google Scholar
19. Mendez, E. E., Bastard, G., Chang, L. L., Esaki, L., Morkoc, H., and Fisher, R., Phys. Rev. B26,7101 (1982).CrossRefGoogle Scholar
20.K. von Klitzing, Surf. Sci. 113,1 (1982).Google Scholar
21. Boebinger, G. S., Chang, A. M., Stormer, H. L., and Tsui, D. C., Phys. Rev. Lett. 55, 1606 (1985).CrossRefGoogle Scholar
22. Tsui, D. C., Th. Englert, Cho, A. Y., and Goddard, A. C., Phys. Rev. Lett. 44, 341 (1980).CrossRefGoogle Scholar
23. Colvard, C., Grant, T. A., Klein, M. V., Fisher, R., Morkoc, H., and Gossard, A. C., Phys. Rev. B31,2080 (1985).CrossRefGoogle Scholar
24. Jusserang, B., Paquet, D., and Regreny, A., Phys. Rev. B30, 6245 (1984).CrossRefGoogle Scholar
25. Sood, A. K., Menendez, J., Cardona, M., and Ploog, K., Phys. Rev. Lett. 54,2111 and 2115 (1985).CrossRefGoogle Scholar
26. Hopfel, R., Lindemann, G., Gornik, E., Stangl, G., Gossard, A. C., and Wiegmann, W., Surf. Sci. 113,118 (1982).Google Scholar
27. Mendez, E. E., Chang, L. L., Landgren, G., Ludeke, R., Esaki, L., and Pollak, F. H., Phys. Rev. Lett. 46,1230 (1981).Google Scholar
28. Shah, J., Pinczuk, A., Gossard, A. C., and Wiegmann, W., Phys. Rev. Lett. 54,2045 (1985).Google Scholar
29. Altarelli, M., Phys. Rev. B28,842 (1983).CrossRefGoogle Scholar
30. Washburn, S., Webb, R. A., Mendez, E. E., Chang, L. L., and Esaki, L., Phys. Rev. B31,1198 (1985).CrossRefGoogle Scholar
31. Mendez, E. E., Esaki, L., and Chang, L. L., Phys. Rev. Lett. 55,2216 (1985).Google Scholar
32. Arch, D. K., Wicks, G., Tonaue, T., and Strudenmann, J., J. Appl. Phys. 58,3933 (1985).Google Scholar
33. Jusserand, B., Voisin, P., Voos, M., Chang, L. L., Mendez, E. E., and Esaki, L., Appl. Phys. Letter. 46, 678 (1985).CrossRefGoogle Scholar
34. Osbourn, G. C., J. Vac. Sci. Technol. B1, 379 (1983).CrossRefGoogle Scholar
35. Anderson, N. G., Laidig, W. D., Lee, G., Lo, Y., and Ozturk, M., in Proc. Materials Research Soc.Vol. 37, ed. Gibson, J. M. and L. R. Dawson (1985), p. 223.Google Scholar
36. Schirber, J. E., Fritz, I. J. and Dawson, L. R., Appl. Phys. Lett. 46, 187 (1985).CrossRefGoogle Scholar
37. Nicholas, R. J., Brummell, M. A., Portal, J. C., Razeghi, M., and Poisson, M. A., in Proc. Int. Conf. Application of High Magnetic Fields in Semicond. Phys.,Grenoble, 1982, p. 131.Google Scholar
38. Nicholas, R. J., Brunel, L. C., Huant, S., Kannai, K., Portal, J. C., Brummell, M. A., Razeghi, M., Cheng, K. Y. and Cho, A. Y., Phys. Rev. Lett. 55,883 (1985).Google Scholar
39. Bean, J. C., in Proc. Materials Research Soc.Vol. 37, ed. Gibson, J. M. and L. R. Dawson (1985), p. 245.Google Scholar
40. Faurie, J. P., presented at the Workshop on the Physics and Chemistry of HgCdTe,San Diego, Oct. 1985.Google Scholar
41. Baukus, J. P., Hunter, A. T., 0. Marsh, J., Jones, C., Wu, G. Y., Hetzler, S. R., McGill, T. C., and Faurie, J. P., as in Ref. 40.Google Scholar
42. Olego, D. J., Faurie, J. P., and Raccah, P. M., Phys. Rev. Lett. 55,328 (1985).Google Scholar
43. Holloway, H. and Walpole, J. N., Progress in Crystal Growth and Characterization, 2,49 (1980).CrossRefGoogle Scholar
44. Kinoshita, H., Takaoka, S., Murase, K., and Fujiyasu, H., in Proc. 2nd Int. Conf. Molecular Beam Epitaxy,Tokyo (1982), p. 61.Google Scholar