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SET and RESET Kinetics of SrTiO3-based Resistive Memory Devices

Published online by Cambridge University Press:  13 May 2015

Karsten Fleck ,
Ulrich Böttger ,
Rainer Waser  and
Stephan Menzel
Karsten Fleck
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology
Ulrich Böttger
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology
Rainer Waser
Affiliation:
Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Germany JARA – Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
Stephan Menzel
Affiliation:
JARA – Fundamentals of Future Information Technology Forschungszentrum Jülich GmbH, Jülich, Germany
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Abstract

In this paper we present a study of the switching kinetics of SrTiO3 based resistive switching memory devices. A pulse scheme is used to cycle the cells between the high resistive state (HRS) and the low resistive state (LRS) thereby monitoring the transient currents for a precise analysis of the SET and RESET transitions. By variation of the width and amplitude of the applied pulses the switching kinetics are studied between 10-8 and 104 s. Taking the pre-switching currents into account, a power dependency of the SET is found that emphasizes the importance of local Joule heating for the nonlinearity of the switching kinetics.

Keywords

kineticsnanostructurememory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1790: Symposium AA – Materials for Beyond the Roadmap Devices in Logic, Power and Memory , 2015 , pp. 7 - 12
Copyright
Copyright © Materials Research Society 2015 

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References

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