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Shape Transition in Self-Organized InAs/InP Nanostructures

Published online by Cambridge University Press:  17 March 2011

H.R. Gutiérrez ,
M.A. Cotta  and
M.M.G. de Carvalho
H.R. Gutiérrez
Affiliation:
Instituto de Física Gleb Wataghin, DFA/LPD, UNICAMP, CP 6165, 13081-970 Campinas-SP, Brazil
M.A. Cotta
Affiliation:
Instituto de Física Gleb Wataghin, DFA/LPD, UNICAMP, CP 6165, 13081-970 Campinas-SP, Brazil
M.M.G. de Carvalho
Affiliation:
Instituto de Física Gleb Wataghin, DFA/LPD, UNICAMP, CP 6165, 13081-970 Campinas-SP, Brazil
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Abstract

In this letter we report the transition from self-assembled InAs quantum-wires to quantumdots grown on (100) InP substrates. This transition is obtained when the wires are annealed at the growth temperature. Our results suggest that the quantum-wires are a metastable shape originated from the anisotropic diffusion over the InP buffer layer during the formation of the first InAs monolayer. The wires evolve to a more stable shape (dot) during the annealing. The driving force for the transition is associated with variations in the elastic energy and hence in the chemical potential produced by height fluctuations along the wire. The regions along the wires with no height variations are more stable allowing the formation of complex, self-assembled nanostructures such as dots interconnected by wires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N5.7
Copyright
Copyright © Materials Research Society 2002

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