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Sidewall-Fence-Free Pt Etching with an Ar/O2 Mixed Gas Plasma

Published online by Cambridge University Press:  10 February 2011

M.-C. Chiang ,
F.-M. Pan ,
T.-C. Wei ,
H.-C. Chien ,
J.-S. Liou  and
H.-K. Chiu
M.-C. Chiang
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C.
F.-M. Pan
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C.
T.-C. Wei
Affiliation:
Department of Chemical Engineering, Chung Yuan University, Chung Li, Taiwan, R.O.C.
H.-C. Chien
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C.
J.-S. Liou
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C.
H.-K. Chiu
Affiliation:
National Nano Device Laboratories, Hsinchu, Taiwan, R.O.C.
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Abstract

Platinum has been successfully patterned with a TiN mask in an Ar/O2 plasma.No fence residue was observed on the etched Pt pattern if the thickness of the TiN mask was less than 300 nm. During the etching process, titanium dioxide and platinum oxides were formed and redeposited on the mask and the Pt structure in the Ar/O2 plasma according to Auger and XPS analyses. The etch rates of Pt and TiN films decreased with increasing oxygen concentration in the Ar/O2 gas mixture. The addition of O2 inthe gas mixture could improve the sidewall slope of the etched Pt structure. This was ascribed to redeposited platinum oxides and TiO2 on the sidewall, which makes the sidewall more resistant to ion etching at a higher concentration of oxygen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 211
Copyright
Copyright © Materials Research Society 1999

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