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Silicidation Mechanism of Co/(Refractory-Metal) Bilayer and Epitaxial Growth of CoSi2 on Si(100) Substrate

Published online by Cambridge University Press:  03 September 2012

Jeong S. Byun ,
Woo S. Kim ,
Min S. Choi ,
Ho J. Cho  and
Hyeong J. Klm
Jeong S. Byun
Affiliation:
Semiconductor Research Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong- Dong Cheongju-Si, 360-480, Korea
Woo S. Kim
Affiliation:
Semiconductor Research Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong- Dong Cheongju-Si, 360-480, Korea
Min S. Choi
Affiliation:
Semiconductor Research Lab., GoldStar Electron Co. Ltd., 50 Hyangjeong- Dong Cheongju-Si, 360-480, Korea
Ho J. Cho
Affiliation:
Dept. of Inorg. Materials Eng. Seoul National Univ., 151-742, Korea
Hyeong J. Klm
Affiliation:
Dept. of Inorg. Materials Eng. Seoul National Univ., 151-742, Korea
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Abstract

The structures of CoSi2 formed from the bilayer of Co/(refractory metal) have been investigated. For a layer reversal and epitaxial growth of CoSi2 on Si substrate, the silicidation temperature of interposed refractory metal should be higher than that of Co and the oxidation potential of the refractory should also be negatively higher than that of Si to remove the native oxide on Si substrate. The main role of the refractory metal layer in the epitaxial growth of CoSi2 is to limit the Co diffusion to Si substrate, controlling the Co-Si reaction rate. Thus Co atoms are able to locate their stable positions with the lowest energy in CoSi2 lattice.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 379
Copyright
Copyright © Materials Research Society 1994

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