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Silicide Metallization of Aluminum Nitride Substrates for High-Temperature Microelectronics

Published online by Cambridge University Press:  15 February 2011

E. Savrun ,
M. Sarikaya ,
A. Luan  and
T. Pearsall
E. Savrun
Affiliation:
QUEST Integrated, Inc., 21414 68th Ave. S., Kent, WA 98032, enders@qi2.com
M. Sarikaya
Affiliation:
MSE Department, Box 352120, University of Washington, Seattle, WA 98195
A. Luan
Affiliation:
MSE Department, Box 352120, University of Washington, Seattle, WA 98195
T. Pearsall
Affiliation:
MSE Department, Box 352120, University of Washington, Seattle, WA 98195
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Abstract

A novel metallization for aluminum nitride substrates to package silicon carbide integrated circuits for use at temperatures up to 600°C was investigated. Chemical equilibrium calculations were used to determine the chemical compatibility of several refractory and transition metal disilicides with AIN. Tungsten disilicide, niobium disilicide, and titanium disilicide were selected for thin film deposition studies. WSi2, NbSi2, and TiSi2 thin films were deposited by RF sputtering on AIN substrates and heat treated at 900°C, 1000°C, and 1200°C in an argon atmosphere. Sheet resistivities were measured and interface stabilities and structures were characterized by scanning and transmission electron microscopy imaging, electron diffraction, and energy dispersive x-ray microanalysis spectroscopy. The results show that metal silicides appear to be promising as metallization for aluminum nitride for use at temperatures above 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 561
Copyright
Copyright © Materials Research Society 1996

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