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Silicon Based System-in-Package : Breakthroughs in Miniaturization and ‘Nano’-integration Supported by Very High Quality Passives and System Level Design Tools

Published online by Cambridge University Press:  26 February 2011

Franck Murray ,
François LeCornec ,
Serge Bardy ,
Catherine Bunel ,
Jan Verhoeven ,
F.C.M. van den Heuvel ,
J.H. Klootwijk  and
Fred Roozeboom
Franck Murray
Affiliation:
franck.murray@philips.com, NXP Semiconductors, CTO/Process and Library Technology, 2, rue de la Girafe, CAEN, 14096, France
François LeCornec
Affiliation:
francois.lecornec@nxp.com, NXP Semiconductors, 2, rue de la Girafe, CAEN Cedex, 14096, France
Serge Bardy
Affiliation:
serge.bardy@nxp.com, NXP Semiconductors, 2, rue de la Girafe, CAEN Cedex, 14096, France
Catherine Bunel
Affiliation:
catherine.bunel@nxp.com, NXP Semiconductors, 2, rue de la Girafe, CAEN Cedex, 14096, France
Jan Verhoeven
Affiliation:
jan.verhoeven@nxp.com, NXP Semiconductors, Prof. Holstlaan 4, Eindhoven, 5656 AA, Netherlands
F.C.M. van den Heuvel
Affiliation:
f.van.den.heuvel@nxp.com, NXP Semiconductors, Prof. Holstlaan 4, Eindhoven, 5656 AA, Netherlands
J.H. Klootwijk
Affiliation:
j.klootwijk@nxp.com, NXP Semiconductors, Prof. Holstlaan 4, Eindhoven, 5656 AA, Netherlands
Fred Roozeboom
Affiliation:
fred.roozeboom@nxp.com, NXP Semiconductors, Prof. Holstlaan 4, Eindhoven, 5656 AA, Netherlands
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Abstract

The very large development of home and domestic electronic appliances as well as portable device has led the microelectronics industry to evolve in two complimentary directions : “More Moore” with the continuous race towards extremely small dimensions hence the development of SoCs (System on Chip) and more recently a new direction that we could name “More than Moore” with the integration of devices that were laying outside the chips and here the creation of SiPs (System in Package).

These two approaches are not in competition one with the other: the paper will show some examples of integrated nano systems that use several SoCs.

The technology we have developed is called Silicon Based System in Package. The first products using this technology are now in volume production and used mainly in the field of wireless communications.

This new technology relies on four pillars. Passive integration is the first. Very efficient and high quality factor capacitors and inductors have been integrated, allowing the creation of complete modules including active devices, filters and decoupling capacitors. High-density MOS capacitors with 1-1000 nF capacitance, and as high values as 25-250+ nF/mm2 specific capacitance have been fabricated in macroporous Si-wafers, containing over 1 billion macropores. Typically an ESR less than 100 mÙ and an ESL less than 25 pH were found for capacitors over 10 nF. This novel concept is an important step forward in improving the stability of power-amplifier modules by replacing conventional SMD technology.

Whereas generations with capacitors density of up to 100 nF/mm2 will be using “conventional” materials and structures, the next steps in the roadmap will call for new 3D structures and materials such as high-k dielectrics.

The second element is advanced packaging. New technologies, such as the assembly of Silicon chips onto other Silicon chips, also named “double flip chip” have been developed. This has been made possible thanks to the combination of the most advanced microbumping and die placement techniques. In addition to a tremendous reduction of size (up to a factor of 10 to 20) these techniques have also brought a better repeatability of system performance.

The third element has been the development of design tools that allow a seamless system design for engineers used to IC design tools and flows. Our Design Environment allows co design of multiple technologies chips and their integration in a single system. This IC-like Design Environment has contributed a lot to the adoption of the technology.

Testing is the fourth element and is one of the economical enablers of the technology. The key words are: “known good die”, RF test, system test? Some innovative RF probing and full on wafer subsystem test will be shown. Even though efficient test is not vital for the technical feasibility of this system integration, it becomes very quickly one of the most important enablers, especially when we deal with very high volumes of production. The conclusion of the paper will be an open door to the future. Some innovations like the integration of light or even energy storage inside our SiPs will be presented.

Keywords

packagingelectronic materialdielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 969: Symposium W – Heterogeneous Integration of Materials for Passive Components and Smart Systems , 2006 , 0969-W02-01-V01-01
Copyright
Copyright © Materials Research Society 2007

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References

[1] Philippe, P. and Oruk, A., “A highly miniaturized 2.4 GHz Bluetooth radio utilizing an advanced System-in-Package technology,” European Microwave Conf., Amsterdam, Oct. 12–14, 2004.Google Scholar
[2] van Beek, J.T.M., van Delden, M., van Dijken, A., van Eerd, P., Jansman, A.B.M., Kemmeren, A.L.A.M., Rijks, T.G.S.M., Steeneken, P.G., den Toonder, J., Ulenaers, M.J.E., den Dekker, A., Lok, P., Pulsford, N., van Straten, F., van Teeffelen, L., de Coster, J. and Puers, R., “High-Q integrated passives and RF-MEMS on silicon”, Mater. Res. Soc. Symp. Proc. 783 (2003) pp. 97–108 Google Scholar
[3] Roozeboom, F., Elfrink, R., Rijks, T.G.S.M., Verhoeven, J., Kemmeren, A. and van den Meerakker, J., “High-Density, Low-Loss MOS Capacitors for Integrated RF Decoupling”, Int. J. Microcircuits and Electronic Packaging, 24 (3) (2001) pp. 182–196, and refs. therein.Google Scholar
[4] Roozeboom, F., Kemmeren, A., Verhoeven, J., van den Heuvel, F., Kretschman, H. and Frič, T., “High-Density, Low-loss MOS Decoupling Capacitors integrated in a GSM Power Amplifier”, Mat. Res. Soc. Symp. Proc. 783 (2003) pp. 157–162.Google Scholar
[5] Roozeboom, F., Kammeren, A., Veroeven, J., van der Heuvel, F, Klootwijk, J., Kretschman, H., Fric, T., Grunsven, E van, Bardy, S., Bunel, C., Chevrie, D., LeCornec, F., Ledain, S., Murray, F. and Philippe, P., “More than Moore: Towards Passive and Si Based System-in-Package integration”, SB Micro Conf., Florianopolis, Brazil, Sept 4–7, 2005; Electrochem. Soc. Symp. Proc. 2005–8 (2005) 16–31.Google Scholar
[6] Tiemeijer, L., Havens, R, de Kort, R., Bouttement, Y., Deixler, P. and Ryczek, M., “Predictive spiral inductor compact model for frequency and time domain”, IEDM Tech. Digest, Washington DC, USA, Dec. 8–10, 2003.Google Scholar
[7] Chevrie, D., Bunel, C., Bouttement, Y., Bardy, S., Hamelin, L., van Grunsven, E., Burghoorn, M. and de Samber, M., “A Silicon-based System in Package Technology”, IMAPS Conf., Bruges, Belgium, June 12–15, 2005.Google Scholar
[8] Deixler, P., Letavic, T., Madhadejkul, T., Bouttement, Y., Brock, R., Tan, P.C., Saikumar, V., Rodriguez, A., Colclaser, R., Kellowan, P., Sun, H., Bell, N., Yao, A., van Langevelde, R., Vanhoucke, T., van Noort, W.D., Hurkx, G.A.M., Crespo, D., Biard, C., Bardy, S. and Slotboom, J.W., “A cost-effective Power-on-Board BiCMOS Manufacturing Technology with Elite Passive Enhancements Optimized for ‘Silicon-based RF System-in-Package Environment”, 2005 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM 2005), Santa Barbara (USA), Oct. 10–11, 2005.Google Scholar
[9] Murray, F., “Silicon Based System-in-Package: a passive integration technology combined with advanced packaging and system based design tools to allow a breakthrough in miniaturization”, 2005 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM 2005), Santa Barbara (USA), Oct. 10–11, 2005.Google Scholar