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Silicon Nanowire Integrated Electrolyte-Insulator-Semiconductor Sensor with an Above-Nernstian Sensitivity for Bio-Sensing Applications

Published online by Cambridge University Press:  13 June 2012

Jin Yong Oh ,
Hyun-June Jang ,
Won-Ju Cho ,
Nezih Pala  and
M. Saif Islam
Jin Yong Oh
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616
Hyun-June Jang
Affiliation:
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Korea
Won-Ju Cho
Affiliation:
Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Korea
Nezih Pala
Affiliation:
Electrical & Computer Engineering, Florida International University, Miami, FL 33174
M. Saif Islam
Affiliation:
Department of Electrical and Computer Engineering, University of California, Davis, CA 95616
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Abstract

Highly sensitive electrolyte-insulator-semiconductor (EIS) sensors were realized by the integration of Si nanowires (NWs), which were fabricated by using a simple and economic electroless wet etching technique. EIS sensors with NWs longer than 1 μm were observed to have considerably increased capacitance and high pH sensitivity. The pH sensitivity of the EIS sensor with 3.8 μm long NWs was 60.2 mV/pH, which is higher than the theoretical Nernstian of 59 mV/pH. The EIS sensors with NWs exhibited slightly worse pH hysteresis and drift properties than that of the conventional planar type EIS sensor. The increases in pH sensitivity, hysteresis and drift are attributable to the extended surface area of the EIS sensors enabled by the NWs.

Keywords

sensorSinanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 127 - 132
Copyright
Copyright © Materials Research Society 2012

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