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Silicon Oxide Composite Film Fabricated by Wet Process at Low Temperature as a Passivation Layer for Printable Electric Device

Published online by Cambridge University Press:  15 March 2011

Sei Uemura ,
Kouji Suemori ,
Manabu Yoshida ,
Satoshi Hoshino ,
Noriyuki Takada ,
Takehito Kodzasa ,
Nobuki Ibraki  and
Toshihide Kamata
Sei Uemura
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Kouji Suemori
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Manabu Yoshida
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Satoshi Hoshino
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Noriyuki Takada
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Takehito Kodzasa
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Nobuki Ibraki
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
Toshihide Kamata
Affiliation:
Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Abstract

Printable devices have been attracting considerable interest because of their application to flexible large-area devices in low cost printable electronics. In order to fabricate such devices, it is necessary to discover a passivation film and develop an efficient process for its preparation. We have previously reported that silicone oxide film is obtained with high density by UV irradiation to silazane compound film at low temperature [1]. The silicon oxide film has electric resistivity more than 10−15 Ωcm and electric strength more than 7 MV/cm. In order to apply the film to passivation layer in printable device, in this paper, preparation of nano-composite film with silicon oxide and clay mineral was investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1113: Symposium F – Low-Cost Solution-Based Deposition of Inorganic Films for Electronic/Photonic Devices , 2008 , 1113-F09-25
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Kodzasa, T., et al., IDW'06 Proceedings, p881, 2006, Kodzasa, T. et al., 2006 Spring Meeting of MRS Abstract.Google Scholar