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Silicon-Based Long Wavelength Infrared Detectors Fabricated by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

T. L. Lin ,
E. W. Jones ,
T. George ,
A. Ksendzov  and
M. L. Huberman
T. L. Lin
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
E. W. Jones
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
A. Ksendzov
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
M. L. Huberman
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
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Abstract

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by molecular beam epitaxial (MBE) growth of p+ SiGe layers on p-type Si substrates. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p+ SiGe layers were grown by MBE using either HBO2 or elemental boron as the dopant source. Improved crystalline quality and lower growth temperatures were achieved for boron-doped SiGe layers as compared with the HBO2-doped layers. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited and was drastically reduced as compared with that of HBO2-doped HIP detectors. The heterojunction barrier was determined to be 0.066 eV from activation energy analysis of the HIP detectors, corresponding to a 18 μm cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 μm has been characterized with corresponding quantum efficiencies of 5 – 0.1%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 477
Copyright
Copyright © Materials Research Society 1991

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References

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