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Si-MBE SOI

Published online by Cambridge University Press:  28 February 2011

T.L. Lin ,
S.C. Chen ,
K.L. Wang  and
S. Iyer
T.L. Lin
Affiliation:
Device Research Laboratory Dept. of Electrical Engineering University of Calif. Los Angeles Los Angeles, CA 90024
S.C. Chen
Affiliation:
Device Research Laboratory Dept. of Electrical Engineering University of Calif. Los Angeles Los Angeles, CA 90024
K.L. Wang
Affiliation:
Device Research Laboratory Dept. of Electrical Engineering University of Calif. Los Angeles Los Angeles, CA 90024
S. Iyer
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

100 μm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon anid subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm2V-1s-1 was obtained by van der Pauw measurements.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 193
Copyright
Copyright © Materials Research Society 1986

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References

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