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Simulation and Quantification of High-Resolution Z-Contrast Imaging of Semiconductor Interfaces

Published online by Cambridge University Press:  25 February 2011

D. E. Jesson ,
S. J. Pennycook  and
M. F. Chisholm
D. E. Jesson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6024
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6024
M. F. Chisholm
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6024
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Abstract

Incoherent characteristics of Z-contrast STEM images are explained using a Bloch wave approach. To a good approximation, the image is given by the columnar high-angle cross-section multiplied by the s-state intensity at the projected atom sites, convoluted with an appropriate resolution function. Consequently, image interpretation can be performed intuitively and quantitative simulation can be implemented on a small computer. The feasibility of ‘column-by-column’ compositional mapping is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 439
Copyright
Copyright © Materials Research Society 1990

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References

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