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Simulation of Mechanisms in Strained Silicon Germanium Epitaxy

Published online by Cambridge University Press:  17 March 2011

Richard J. Wagner  and
Erdogan Gulari
Richard J. Wagner
Affiliation:
Department of Chemical EngineeringUniversity of Michigan Ann Arbor, Michigan 48109, USA
Erdogan Gulari
Affiliation:
Department of Chemical EngineeringUniversity of Michigan Ann Arbor, Michigan 48109, USA
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Abstract

Growth of strained semiconductors can lead to self-assembly of interesting structures such as quantum dots. Simulation of this growth requires an accurate and efficient model for the interactions of lattice mismatched materials. We present a potential for calculating the bond energies in a diamond-like crystal of silicon and germanium. With this potential we predict the strain profiles in an embedded quantum dot and discuss the mechanisms of island formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , N1.3
Copyright
Copyright © Materials Research Society 2002

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