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Si-N nanowire formation from Silicon nano and microparticles.

Published online by Cambridge University Press:  01 February 2011

Chandana Rath ,
A. Pinyol ,
J. Farjas ,
P. Roura  and
E. Bertran
Chandana Rath
Affiliation:
GRM, Department de Fisica, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
A. Pinyol
Affiliation:
FEMAN, Department de Fisica Aplicada i Òptica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona, Catalonia, Spain
J. Farjas*
Affiliation:
GRM, Department de Fisica, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
P. Roura
Affiliation:
GRM, Department de Fisica, Universitat de Girona, Campus Montilivi, E17071 Girona, Catalonia, Spain
E. Bertran
Affiliation:
FEMAN, Department de Fisica Aplicada i Òptica, Universitat de Barcelona, Av. Diagonal 647, E08028 Barcelona, Catalonia, Spain
*
E-mail: jordi.farjas@udg.es
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Abstract

We report silicon nitride whisker formation from hydrogenated amorphous silicon (a-Si:H) nanoparticles grown by PECVD for the first time. We compared the results with the kinetics of whisker formation from ball milled crystalline silicon (c-Si) microparticles. Whisker formation is analyzed at different temperatures (900–1440 °C) and oxygen partial pressures. At temperatures equal or above 1350 C and at low oxygen partial pressure we observe monocrystalline α-Si3N4 whiskers having 30–100 nm diameter and several microns length. By increasing the oxygen partial pressure, the structure of whiskers is completely changed, as shown by electron microscopy. In this case we observe α-Si3N4 whiskers covered by an amorphous silica layer at 1350 C. Finally, when the precursor material is silicon microparticles, thicker (170–330 nm) and longer whiskers are formed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 789 , 2003 , N3.20
Copyright
Copyright © Materials Research Society 2004

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References

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