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Single Crystalline SOI Square Islands Fabricated by LaserRecrystallization Using a Surrounding Antireflection Cap and SuccessiveSelf-Aligned Isolation Utilizing the Same Cap

Published online by Cambridge University Press:  25 February 2011

R. Mukai ,
N. Sasaki ,
T. Iwai ,
S. Kawamura  and
M. Nakano
R. Mukai
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
N. Sasaki
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
T. Iwai
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
S. Kawamura
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
M. Nakano
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
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Abstract

A new laser recrystallizing technique has been developedfor high densitySOI-LSI's. This technique produces single crystalline silicon islands on anamorphous insulating layerwithout seed. Square windows are opened atarbitrary places in an antireflection cap over a polycrystalline film on anamorphous insulatinq layer. Grain boundaries of the polycrystalline Si inthe window are removed completely at the subsequent laser-recrystallizationstep. Single crystalline silicon islands are formed by self-aligned etchingof silicon film which was covered by the antireflection cap. This techniqueis an effective method for fabricating high density SOI-LSI's, since thesinglecrystalline islands can be fabricated at arbitrarily selected places.Yield of the grain-boundary-free islands was 95% the size of the island is1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.

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References

REFERENCES

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