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Sintering of Amorphous Si3N4 Nanoclusters: A Molecular Dynamics Study of Stress Analysis

Published online by Cambridge University Press:  10 February 2011

Jinghan Wang ,
Kenji Tsuruta ,
Andrey OmeItchenko ,
Rajiv K. Kalia  and
Priya Vashishta
Jinghan Wang
Affiliation:
Concurrent Computing Laboratory for Materials Simulations Department of Physics & Astronomy and Department of Computer Science Louisiana State University, Baton Rouge, LA 70803-4001jwang@rouge.phys.lsu.eduwww.cclms.lsu.edu
Kenji Tsuruta
Affiliation:
Concurrent Computing Laboratory for Materials Simulations Department of Physics & Astronomy and Department of Computer Science Louisiana State University, Baton Rouge, LA 70803-4001jwang@rouge.phys.lsu.eduwww.cclms.lsu.edu
Andrey OmeItchenko
Affiliation:
Concurrent Computing Laboratory for Materials Simulations Department of Physics & Astronomy and Department of Computer Science Louisiana State University, Baton Rouge, LA 70803-4001jwang@rouge.phys.lsu.eduwww.cclms.lsu.edu
Rajiv K. Kalia
Affiliation:
Concurrent Computing Laboratory for Materials Simulations Department of Physics & Astronomy and Department of Computer Science Louisiana State University, Baton Rouge, LA 70803-4001jwang@rouge.phys.lsu.eduwww.cclms.lsu.edu
Priya Vashishta
Affiliation:
Concurrent Computing Laboratory for Materials Simulations Department of Physics & Astronomy and Department of Computer Science Louisiana State University, Baton Rouge, LA 70803-4001jwang@rouge.phys.lsu.eduwww.cclms.lsu.edu
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Abstract

We investigate the onset and growth of the neck between amorphous Si3N4 nanoclusters at zero and finite pressures. Local stress fluctuations and atomic self-diffusion in the interface region are found to be responsible for neck formation. External pressure has a dramatic influence on the rate of sintering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 408: Symposium P – Materials Theory, Simulations, and Parallel Algorithms , 1995 , 573
Copyright
Copyright © Materials Research Society 1996

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