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SiO2 Growth and Annealing by Lamp heating

Published online by Cambridge University Press:  26 February 2011

Z. A. Weinberg ,
T. N. Nguyen ,
S. A. Cohen  and
R. Kalish
Z. A. Weinberg
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
T. N. Nguyen
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
S. A. Cohen
Affiliation:
IBM Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, New York 10598.
R. Kalish
Affiliation:
Solid State Institute, Technion, Haifa, Israel.
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Abstract

This paper reports the results of a study of thin SiO2 growth and annealing in a lamp heater (Heatpulse). Good quality 5–10 mn SiO2 films on silicon have been obtained. For good oxides the average destructive breakdown- field was 13 MV/cm and very few or no low-field breakdowns were found. The breakdown statistics were obtained with Al gate capacitors and by a current staircase-ramp technique which is described in the paper. Processing with a single oxidation step, oxidationannealing, and oxidation-annealing-oxidation are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 327
Copyright
Copyright © Materials Research Society 1986

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References

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