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Sol-Gel Synthesis and Characterization of BiFeO3-PbTiO3 Thin Films

Published online by Cambridge University Press:  01 February 2011

Ashish Garg ,
Soumya Kar ,
Anju Dixit  and
D C Agrawal
Ashish Garg
Affiliation:
a.garg.98@gmail.com, IIT KANPUR, MATERIALS AND METALLURGICAL ENGINEERING, WL#104,, MULTIFUNCTIONAL LABORATORY,, Department of Materials Engg., IIT KANPUR-208016,, INDIA, KANPUR, 208016, India, 0091-512-2597904, 0091-512-2597505
Soumya Kar
Affiliation:
soumyak@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, Kanpur, 208016, India
Anju Dixit
Affiliation:
anjud@iitk.ac.in, Indian Institute of Technology Kanpur, Materials Science Programme, Kanpur, 208016, India
D C Agrawal
Affiliation:
agrwald@iitk.ac.in, Indian Institute of Technology Kanpur, Materials Science Programme, Kanpur, 208016, India
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Abstract

In this work, we report on the synthesis and characterization of thin films of (BiFeO3)1−x (PbTiO3)x (BFPT) solid solutions of compositions around morphotropic phase boundary (MPB) grown on platinized silicon (111) Pt/TiO2/SiO2/Si substrate by sol-gel based spin coating technique. The films were post-annealed at 700 and 750°C for 1 h in air. Morphological analysis of the films was carried out by scanning electron microscopy. Grazing incidence X-ray diffractometry revealed the perovskite structure of the films and peaks suggested the presence of rhombohedral structured pure BFPT phase in polycrystalline form. Scanning electron microscopy suggested that films annealed at 750degC had a denser microstructure as compared to those at 700°C. The room temperature dielectric constant of the films with composition of BF:PT :: 75:25 was measured to be ∼1200 at a frequency of 100 kHz.

Keywords

thin filmferroelectricdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I08-08
Copyright
Copyright © Materials Research Society 2007

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References

[1] Ederer, C. andSpaldin, N. A., Phys. Rev. B 71, 060401(R) (2005)Google Scholar
[2] Teague, J.R., Gerson, R., James, W.J., Solid State Commun. 8, 1073 (1970)Google Scholar
[3] Fedulov, S. A.,Ladyzhinskii, P. B.,Pyatigorskaya, I. L., andVenevstev, Yu. N., Sov. Phys. Solid State 6, 375 (1964)Google Scholar
[4] Sunder, V. V. S. S. Sai, Halliyal, A., andUmarij, A. M., J. Mater. Res., 10, 1301,1995 Google Scholar
[5] Cheng, J. R. andCross, L. E., Proc. Mater. Res. Soc., 784 (2004)Google Scholar