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Solid Phase Epitaxy of UHV-Deposited Amorphous Si Over Recessed SiO2 Layer

Published online by Cambridge University Press:  25 February 2011

M. Tabe  and
Y. Kunii
M. Tabe
Affiliation:
Atsugi Electrical Communication Laboratory, NTT, 1839-Ono, Atsugi-shi, Kanagawa 243-01, Japan.
Y. Kunii
Affiliation:
Atsugi Electrical Communication Laboratory, NTT, 1839-Ono, Atsugi-shi, Kanagawa 243-01, Japan.
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Abstract

Lateral solid phase epitaxy (L-SPE) of ultra-high-vacuum (UHV) depositedamorphous Si (a-Si) over patterned SiO2 has been studied to producemonocrystalline silicon-on-insulator (SOI) films. When employingUHV-deposited a-Si, it is essential for L-SPE to reduce step height at thepattern boundary. This is because low density a-Si including columnar voidsis formed at the step wall by the self-shadowing effect and SPE region doesnot extend across the low density a-Si area. L-SPE growth distance of 7 μmwas achieved by low temperature annealing (575°C, 20 hr) on a planarsubstrate with recessed SiO2 patterns. Another depositiontechnique of a-Si for SPE, i.e., chemical vapor deposition is reviewed forcomparison.

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