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Solid Phase Processes forSemiconductor-On-Insulator

Published online by Cambridge University Press:  25 February 2011

C.V. Thompson
C.V. Thompson*
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA. 02139
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Abstract

A wide variety of techniques for producing device-quality semiconductorfilms on insulating substrates (SOI) are being studied. Processes whichprovide low defect density films at low temperatures and which do notrequire seeding from a single crystal substrate would offer the greatestflexibility. While such processes do not currently exist, approaches basedon crystallization of amorphous silicon or grain growth in polycrystallinesilicon are being investigated. Development of either approach requirescareful control of film properties and improved understanding of thefundamental materials processes involved. Theory and experiments onsurface-energy-driven secondary grain growth (SEDS6G) are briefly reviewed.Controlled SEDS66 may provide a low temperature means of obtaining lowdefect density films of a variety of materials on a common substrate.

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