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Solid-Liquid Interface Instability in the Energy-BeamRecrystallization of Silicon on Insulator

Published online by Cambridge University Press:  25 February 2011

El-Hang Lee
El-Hang Lee*
Affiliation:
Monsanto Electronic Materials Company, St. Peters, MO 63376 Present address: AT&T Technologies, Engineering Research Center, P. O. Box 900, Princeton NJ 08540
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Abstract

An attempt has been made to systematically sort out the characteristic modesof morphological transition in the energy beam recrystallized thin filmsilicon on insulating substrates, and to relate them to the mechanisms ofsolid-liquid interface stability breakdown. Stable to unstable breakdownmodes include faceted, cellular, and dendritic configurations as well astransient and composite configurations thereof. These primary modes ofbreakdown then lead to the secondary modes of breakdown which constitute thesub-boundary formation. The mechanics of the primary (interface) breakdownand that of the secondary (sub-boundary) breakdown must be clearlydifferentiated in understanding the breakdown process. Constitutionalsupercooling and absolute supercooling models have been used to explain thevarious interface instabilities.

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References

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