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Solution-Processed Inorganic Transistors and Sub-Micron Non-Lithographic Patterning using Nanoparticle Inks

Published online by Cambridge University Press:  21 February 2011

Brent A. Ridley
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
Babak Nivi
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
Brian N. Hubert
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
Colin A. Bulthaup
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
Eric J. Wilhelm
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
Joseph M. Jacobson
Affiliation:
MIT Media Laboratory, 20 Ames Street, Cambridge, A 02139
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Abstract

Pyridine solutions of CdSe nanocrystals were solution-deposited in the fabrication of thin film transistors (TFTs). A peak mobility of 1 cm2V−1s−1 and an ON/OFF ratio of 3×104 were observed for TFTs processed at 350 °C. The nanocrystals acted as a precursor to the bulk material, coalescing to form a semiconductor thin film when heated at plastic-compatible temperatures. Single crystalline regions several hundred times the size of the original semiconductor nanocrystals were observed for films processed at 350 °C. We also report a process for direct liquid phase deposition and patterning of nanoparticle inks at sub-micron resolutions by elastomeric embossing and AFM nanospotting. These results suggest that microelectronic devices produced from nanoparticle-based inks can enjoy the processing advantages usually associated with organic materials while retaining the performance advantages typically associated with inorganic materials.

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Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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