Hostname: page-component-cb9f654ff-k7rjm Total loading time: 0 Render date: 2025-08-26T02:42:44.469Z Has data issue: false hasContentIssue false
  • English
  • Français

Solving Interface Structures by Combined Electron Microscopy and X-Ray Diffraction

Published online by Cambridge University Press:  15 February 2011

A. Bourret  and
G. Feuillet
A. Bourret
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée Centre d'Etudes Nucléaires de Grenoble - 85 X - 38041 GRENOBLE Cedex, FRANCE
G. Feuillet
Affiliation:
Département de Recherche Fondamentale sur la Matière Condensée Centre d'Etudes Nucléaires de Grenoble - 85 X - 38041 GRENOBLE Cedex, FRANCE
Get access

Abstract

By a combination of high resolution imaging (HREM) and grazing incidence X-ray scattering (GIXS), periodic interfaces with large unit cell can be solved at an atomic scale. The advantage of recording information in the real space is that phases are directly encoded in the image. On the other hand the X-ray diffraction gives quantitative information at a resolution level better than with HREM. This combined analysis is illustrated on GaAs (001)-CdTe (111) and on GaAs(001)-GaSb(001) interfaces. In both cases the structure at the interface is obtained and some mechanisms for the strain relaxation at heterostructures with large misfit are proposed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 295: Symposium W – Atomic-Scale Imaging of Surfaces and Interfaces , 1992 , 71
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Hull, R., Bean, J.C., Werder, D.J. and Leibenguth, R.E., Phys. Rev. B 40, 1681 (1989)CrossRefGoogle Scholar
[2] Kiely, C.J., Chyi, J.I., Rockett, A. and Morkoç, H., Philos. Mag. A 60, 321 (1989)Google Scholar
[3] Rocher, A., Silva, F. W. O. Da and Raisin, C., Revue Phys. Appl. 25, 957 (1990)Google Scholar
[4] Merwe, J.H. Van der, J. Appl. Phys. 41, 4725 (1970)Google Scholar
[5] Fenner, D.B., Biegelsen, D.K., Krusor, B.S., Ponce, F.A. and Tramontana, J.C., in Atomic scale structure of interfaces, edited by Bringans, R.D., Feenstra, R.M. and Gibson, J.M. (Mater Res. Soc. Proc, 159, Pittsburgh 1990) pp. 15–20 Google Scholar
[6] Asai, M., Veber, H. and Tatauyama, C., J. Appl. Phys. 58, 2577 (1985)Google Scholar
[7] For a review see for instance in II-VI Compounds 1991 Edited by Fujita, S.,Vishino, T., Taguchi, T. - North Holland 1992 - Elsevier Publ. Google Scholar
[8] Tatarenko, S., Cibert, J., Gobil, Y., Feuillet, G., Saminadayar, K., Chami, A.C. and Ligeon, E., Appl. Surface Science 41/42, 470 (1989).Google Scholar
[9] Faurie, P., Hsu, C., Sivanathan, S. and Chu, X., Surface Science 168, 473 (1986)Google Scholar
[10] Bourret, A. and Fuoss, P.H., Appl. Phys. Lett. 61,(9) 1034 (1992)Google Scholar
[11] Kolodziejski, M., Filz, T., Krotz, A., Richter, W. and Zahn, D.R.T, J. Cryst. Growth 117, 549 (1992)Google Scholar
[12] Robinson, I. K., Vlieg, E. and Ferrer, S., Phys. Rev. B 42, 6954 (1990)Google Scholar
[13] Bourret, A., Rouviere, J. L. and Penisson, J. M., Acta. Cryst. A 44, 838 (1988)Google Scholar
[14] Ourmazd, A., Taylor, D.W., Bode, M. and Kim, Y., Science 246, 1751 (1989)Google Scholar
[15] Fuoss, P.H. and Robinson, I.K., Nucl. Instrum. and Methods A 222, 164 (1984)Google Scholar
[16] Ichinose, Y., private communicationGoogle Scholar
[17] Loubradou, M. Thesis, Université de Grenoble, France (1990)Google Scholar
[18] Merwe, J.H. Van der, J. Appl. Phys. 34, 123 (1963)Google Scholar
[19] Bonnet, R., Philos. Mag. A. 43, 1165 (1981)Google Scholar
[20] Chami, A. C., Ligeon, E., Danielou, R. and Fontenille, J., Appl. Phys. Lett. 52, 1502 (1988)Google Scholar
[21] Cohen-Solal, G., Bailly, F. and Barbe, M., Appl. Phys. Lett. 49, 1519 (1986)Google Scholar
[22] Li, D., Nakamura, Y., Otsuka, N., Quiu, J., Kobayashi, M. and Gunshor, R.L., J. Vac. Sci. Technol B9, 2167 (1991)Google Scholar