Hostname: page-component-cb9f654ff-pvkqz Total loading time: 0 Render date: 2025-08-24T16:18:33.742Z Has data issue: false hasContentIssue false
  • English
  • Français

Solving the Structure of Interfaces by High Resolution Electron Microscopy

Published online by Cambridge University Press:  21 February 2011

Alain Bourret
Alain Bourret*
Affiliation:
Service de Physique,S. CEN-Grenoble, 85 X, 38041 Grenoble Cédex, France
Get access

Abstract

This paper reviews some of the new advancements made in solving the structure of planar interfaces in a wide range of materials and interface types. The main contributions of the HREM technique are the determination of the atomic positions at the interface, the detection of additional defects such as dislocations or monoatomic steps and more recently the chemical composition when crossing the interface. It is concluded that quantitative results obtained by image processing and pattern recognition will in the future greatly improve the knowledge of interfacial structures at an atomic scale.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 139: Symposium R – High Resolution Microscopy of Materials , 1989 , 3
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Hutchison, J.L., in Inst. Phys. Conf. Ser. No.87 (IOP Publishing Ltd, 1987), p. 1Google Scholar
[2] Bourret, A. and Bacmann, J.J., Revue Phys. Appl. 22, 563 (1987)Google Scholar
[3] Petford-Long, A.K., Stearns, M.B., Chang, C.H., Nutt, S.R., Stearns, D.G., Ceglio, N.M. and Hawrylik, A.M., J. Appl. Phys. 61, 1422 (1987)CrossRefGoogle Scholar
[4] Castano, V.M. and Krakow, W., Surface Science, 191, 45 (1987)CrossRefGoogle Scholar
[5] Zhang, S.Y. and Cowley, J.M., Thin Solid Films, 148, 301 (1987)Google Scholar
[6] Guan, R., Hashimoto, H., Kuo, K.H. and Yoshida, T., Acta Cryst. B43, 343 (1987)Google Scholar
[7] Dahmen, U., Pelton, A.R., Whitcomb, M.J. and Westmacott, K.H., in Mater. Res. Soc. Proc. 52, 1986, p. 217 Google Scholar
[8] Howe, J.M., Laughlin, D.E. and Vasudévan, A.K., Phil. Mag. A 57, 955 (1988)Google Scholar
[9] Penisson, J.M. and Regheere, G., J. of Mat. Science and Engineering, in pressGoogle Scholar
[10] Gratias, D. and Thalal, A., Phil. Mag. Lett., 57, 63 (1988)Google Scholar
[11] Papon, A.M., Petit, M. and Bacmann, J.J., Phil. Mag. A, 49, 573 (1984)Google Scholar
[12] Bourret, A., Billard, L. and Petit, M., in Inst. Phys. Conf. Ser. no 76 (Adam Hilger Ltd, 1985) p. 23Google Scholar
[13] Goues, K.F. Le, Krakow, W. and Ho, P.S., Phil. Mag. A53, 833 (1986)Google Scholar
[14] Cullis, A.G., Chew, N.G., Hutchison, J.L., Irvine, S.J.C. and Giess, J., in Inst. Phys. Conf. Ser. no 76 (Adam Hilger Ltd, 1985) p. 29Google Scholar
[15] Feuillet, G., Bourret, A., Saminadayar, K., Hewat, E., Cioccio, L. Di, Tatarenko, S. and Cibert, J., in Inst. Phys. Conf. Ser. no 93 (IOP Publishing Ltd, 1988) p. 395Google Scholar
[16] Gibson, J.M. and Philipps, J.M., Appl. Phys. Lett. 43, 828 (1983)Google Scholar
[17] Hutchison, J.L., Booker, G.R. and Abrahams, M.S., in Inst. Phys. Conf. Ser. No 61 (Adam Hilger Ltd 1981) p. 139Google Scholar
[18] Phillips, J.M., Feldman, L.C., Gibson, J.M. and McDonald, M.L., J. Vac. Sci. Technol. A1, 563 (1983)CrossRefGoogle Scholar
[19] Bonnet, R., Benlamine, A. and Reynaud, F., Acta Met. 35, 711 (1987)Google Scholar
[20] Hull, R., Gibson, J.M. and Beam, J.C., Appl. Phys. Lett. 46, 179 (1985)Google Scholar
[21] Cioccio, L. Di, Hewat, E.A., Million, A., Gaillard, J.P. and Dupuy, M., in Inst. of Conf. Ser. No 87 (IOP Publishing Ltd, 1987) p. 243Google Scholar
[22] Feuillet, G. in “Evaluation of advanced Semiconductors Materials by Electron Microscopy” (Bristol 1988) in pressGoogle Scholar
[23] Treacy, M.M.J. and Gibson, J.M., J. Vac. Sci. Technol. B4 (6) 1458 (1986)CrossRefGoogle Scholar
[24] Bourret, A. and Bacmann, J.J., Surface Science, 162, 495 (1985)Google Scholar
[25] Kawarada, H., Ishida, M., Nakamishi, J. and Ohdomari, I., Phil. Mag. A54, 729 (1986)CrossRefGoogle Scholar
[26] Cullis, A.G., Chew, N.G., Irvine, S.J.C. and Giess, J., in Inst. Phys. Conf. Ser. No 87 (IOP Publishing Ltd 1987) p. 141Google Scholar
[27] Bourret, A. and Rouvière, J.L., in Polycristalline Semiconductors (Malente 1988) in pressGoogle Scholar
[28] Elkajbaji, M. and Thibault, J., Phil. Mag. A, 58, 325 (1988)CrossRefGoogle Scholar
[29] Bourret, A., Rouvière, J.L. and Pdnisson, J.M., Acta Cryst. in pressGoogle Scholar
[30] Cherns, D., Hetherington, C.J.D. and Humphreys, C.J., Phil. Mag. A 49, 165 (1984)Google Scholar
[31] Rouvière, J.L. and Bourret, A. in Polycristalline Semiconductors (Malente 1988) in pressGoogle Scholar
[32] Charaï, A. (private communication)Google Scholar
[33] Bourret, A., Rouvière, J.L. and Spendeler, J., Phys. Stat. Sol. (a) 107, 481 (1988)Google Scholar
[34] Ourmazd, A., Rentschler, J.A. and Taylor, D.W., Phys. Rev. Lett. 57, 3073 (1986)Google Scholar
[35] Ourmazd, A., Tsang, W.T., Rentschler, J.A. and Taylor, D.W., Appl. Phys. Lett. 50, 1417 (1987)Google Scholar
[36] Glaisher, R.B., Smith, D.J. and Spargo, A E C, in Inst. Phys. Conf. Ser No 87 (IOP Publishing Ltd, 1987) p. 33Google Scholar
[37] Ichinose, H., Furuta, T., Sakaki, H. and Ishida, Y., in Proc. of XI th Int. Congress on Electron Microscopy, Kyoto (The Japanese Society of Electron Microscopy, Tokyo 1986) pp. 1483–1486 Google Scholar
[38] Ourmazd, A., Taylor, D.W., Cunningham, J. and Tu, C.W., to be publishedGoogle Scholar
[39] Jong, A.F. de, Coene, W. and Bender, H., in Inst. of Phys. Conf. Ser. No 87 (IOP Publishing Ltd 1987) p. 9Google Scholar
[40] Bourret, A. and Bacmann, J.J., in Inst. Phys. Conf. Ser. No 78 (Adam Hilger Ltd 1985) p. 337Google Scholar
[41] Nakamura, T., Ikeda, M., Muto, S. and Umebu, I., Appl. Phys. Lett. 53, 379 (1988)CrossRefGoogle Scholar