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Spatially and Temporally Resolved Reflectivity Profiles ofCrystalline Silicon Irradiated by 48 Ps Pulses of One-Micron LaserRadiation

Published online by Cambridge University Press:  25 February 2011

Steven C. Moss ,
Ian W. Boyd ,
Thomas F. Boggess  and
Arthur L. Smirl
Steven C. Moss
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Ian W. Boyd
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Thomas F. Boggess
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
Arthur L. Smirl
Affiliation:
Center for Applied Quantum Electronics, Department of Physics, North Texas State University, Denton, Texas 76203
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Abstract

Time-resolved reflectivity measurements have been performed onsingle-crystal silicon irradiated by intense 48 ps pulses of 1 micronradiation. The temporal evolution of the spatial profile of thelaser-induced reflectivity changes has been monitored using spatialcorrelation and surface imaging techniques. These measurements resolveapparent discrepancies between previous spatially and temporally averagedmeasurements at this wavelength and similar measurements in the visible.

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References

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